Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress TC Chen, TC Chang, CT Tsai, TY Hsieh, SC Chen, CS Lin, MC Hung, ... Applied Physics Letters 97 (11), 2010 | 209 | 2010 |
Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor CT Tsai, TC Chang, SC Chen, I Lo, SW Tsao, MC Hung, JJ Chang, ... Applied Physics Letters 96 (24), 242105-242105-3, 2010 | 193 | 2010 |
Fine tuning the purity of blue emission from polydioctylfluorene by end-capping with electron-deficient moieties MC Hung, JL Liao, SA Chen, SH Chen, AC Su Journal of the American Chemical Society 127 (42), 14576-14577, 2005 | 172 | 2005 |
Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition TC Chen, TC Chang, TY Hsieh, CT Tsai, SC Chen, CS Lin, MC Hung, ... Applied Physics Letters 97 (19), 2010 | 127 | 2010 |
Displays with silicon and semiconducting oxide thin-film transistors H Osawa, KW Kim, MC Hung, SC Chang, YC Chen US Patent 9,818,765, 2017 | 113 | 2017 |
Nitrogenated amorphous InGaZnO thin film transistor PT Liu, YT Chou, LF Teng, FH Li, HP Shieh Applied Physics Letters 98, 052102, 2011 | 104 | 2011 |
Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation SY Huang, TC Chang, MC Chen, SC Chen, CT Tsai, MC Hung, CH Tu, ... Electrochemical and Solid-State Letters 14 (4), H177, 2011 | 85 | 2011 |
Excimer formation by electric field induction and side chain motion assistance in polyfluorenes HH Lu, CY Liu, TH Jen, JL Liao, HE Tseng, CW Huang, MC Hung, ... Macromolecules 38 (26), 10829-10835, 2005 | 80 | 2005 |
Liquid crystal displays with oxide-based thin-film transistors SC Chang, MC Hung, CH Yu, TK Chang, AJ Roudbari, SC Lin, KW Kim, ... US Patent 9,564,478, 2017 | 73 | 2017 |
Liquid crystal displays with minimized transmission loss and enhanced off-axis color fidelity BD Yang, CH Tai, H Osawa, KW Kim, MC Hung, SC Lin, SC Chang, ... US Patent 9,645,464, 2017 | 55 | 2017 |
Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO: N Bilayer Stack Channel Layers PT Liu, YT Chou, LF Teng, FH Li, CS Fuh, HPD Shieh IEEE electron device letters 32 (10), 1397-1399, 2011 | 51 | 2011 |
Self-assembled monolayer modification of indium tin oxide anode surface for polymer light-emitting diodes with poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] for … CC Hsiao, CH Chang, MC Hung, NJ Yang, SA Chen Applied Physics Letters 86, 223505, 2005 | 51 | 2005 |
Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors SC Chang, MC Hung, CH Yu, TK Chang, KW Kim, CY Huang, SH Lee, ... US Patent 9,412,799, 2016 | 48 | 2016 |
High-efficiency polymer light-emitting diodes based on poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] with plasma-polymerized CHF3-modified indium tin oxide as an … CC Hsiao, CH Chang, TH Jen, MC Hung, SA Chen Applied physics letters 88 (3), 2006 | 39 | 2006 |
Back channel etch metal-oxide thin film transistor and process MC Hung, SC Chang, V Gupta, YB Park US Patent 9,065,077, 2015 | 33 | 2015 |
Highly efficient top-emitting organic light-emitting diodes with self-assembed monolayer-modified Ag as anodes MC Hung, KY Wu, YT Tao, HW Huang Applied physics letters 89 (20), 2006 | 24 | 2006 |
Display with Column Spacer Structures Resistant to Lateral Movement SH Lee, BD Yang, CY Huang, KW Kim, SC Chang, YC Yang, YB Park, ... US Patent App. 13/741,138, 2014 | 16 | 2014 |
Interface formation between poly (9, 9-dioctylfluorene) and poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid) CH Chang, JL Liao, MC Hung, SA Chen Applied physics letters 90 (6), 2007 | 15 | 2007 |
TFT mask reduction MC Hung, Y Park, CY Huang, SC Chang, JZ Zhong US Patent 8,801,948, 2014 | 13 | 2014 |
Electronic Device with Variable Refresh Rate Display Driver Circuitry CY Huang, JZ Zhong, KW Kim, MC Hung, SC Chang US Patent App. 14/150,579, 2014 | 12 | 2014 |