| Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum MH K.Y.Lin, H.W.Wan, K.H.M.Chen, Y.T.Fanchiang, W.S.Chen, Y.H.Lin, Y.T.Cheng ... Journal of Crystal Growth 512, 223, 2019 | 25 | 2019 |
| Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)–growth, structural, and electrical characterization SY Wu, KH Chen, YH Lin, CK Cheng, CH Hsu, J Kwo, M Hong Microelectronic Engineering 147, 310-313, 2015 | 22 | 2015 |
| Perfecting the Al2O3/In0. 53Ga0. 47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer … M Hong, HW Wan, KY Lin, YC Chang, MH Chen, YH Lin, TD Lin, TW Pi, ... Applied Physics Letters 111 (12), 2017 | 21 | 2017 |
| Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition YH Lin, CK Cheng, KH Chen, CH Fu, TW Chang, CH Hsu, J Kwo, M Hong Materials 8 (10), 7084-7093, 2015 | 20 | 2015 |
| Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs (001) YH Lin, CH Fu, KY Lin, KH Chen, TW Chang, JR Kwo, M Hong Applied Physics Express 9 (8), 081501, 2016 | 18 | 2016 |
| Surface electronic structure of epi germanium (001)-2× 1 YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ... Applied Physics Express 10 (7), 075701, 2017 | 17 | 2017 |
| Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process CH Fu, YH Lin, WC Lee, TD Lin, RL Chu, LK Chu, P Chang, MH Chen, ... Microelectronic Engineering 147, 330-334, 2015 | 17 | 2015 |
| In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures TW Pi, YH Lin, YT Fanchiang, TH Chiang, CH Wei, YC Lin, GK Wertheim, ... Nanotechnology 26 (16), 164001, 2015 | 17 | 2015 |
| Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping CN Wu, YH Lin, YT Fanchiang, HY Hung, HY Lin, PH Lin, JG Lin, SF Lee, ... Journal of Applied Physics 117 (17), 17D148, 2015 | 16 | 2015 |
| Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study TW Chang, KY Lin, YH Lin, LB Young, J Kwo, M Hong Microelectronic Engineering 178, 199-203, 2017 | 13 | 2017 |
| Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface HW Wan, YH Lin, KY Lin, TW Chang, RF Cai, J Kwo, M Hong Microelectronic Engineering 178, 154-157, 2017 | 12 | 2017 |
| In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ... Applied Physics Letters 118 (25), 252104, 2021 | 9 | 2021 |
| Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition YH Lin, KY Lin, WJ Hsueh, LB Young, TW Chang, JI Chyi, TW Pi, J Kwo, ... Journal of Crystal Growth 477, 164-168, 2017 | 9 | 2017 |
| Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ... ACS nano 16 (2), 2369-2380, 2022 | 8 | 2022 |
| Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ... Applied Surface Science 393, 294-298, 2017 | 8 | 2017 |
| Semiconductor device and manufacturing method thereof M Hong, JN Kwo, Y Lin, KY Lin, Y Bo-Yu, WAN Hsien-Wen US Patent 10,748,774, 2020 | 7 | 2020 |
| Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface YC Liu, YW Chen, SC Tseng, MT Chang, SC Lo, YH Lin, CK Cheng, ... Applied Physics Letters 107 (12), 122402, 2015 | 6 | 2015 |
| Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1018, 2022 | 5 | 2022 |
| Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure WH Chang, HW Wan, YT Cheng, YHG Lin, T Irisawa, H Ishii, J Kwo, ... Japanese Journal of Applied Physics 61 (SC), SC1024, 2022 | 4 | 2022 |
| Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection J Song, Y Lin, T Hoshii, H Wakabayashi, K Tsutsui, K Kakushima Japanese Journal of Applied Physics 59 (SM), SMMB01, 2020 | 4 | 2020 |
M. HongNatl Taiwan Univ. Bell Laboratories在 phys.ntu.edu.tw 的電子郵件地址已通過驗證
