追蹤
Yen-Hsun (Glen) Lin
Yen-Hsun (Glen) Lin
Department of Physics, National Tsing Hua University (NTHU)
在 phys.nthu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
MH K.Y.Lin, H.W.Wan, K.H.M.Chen, Y.T.Fanchiang, W.S.Chen, Y.H.Lin, Y.T.Cheng ...
Journal of Crystal Growth 512, 223, 2019
222019
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)–growth, structural, and electrical characterization
SY Wu, KH Chen, YH Lin, CK Cheng, CH Hsu, J Kwo, M Hong
Microelectronic Engineering 147, 310-313, 2015
222015
Perfecting the Al2O3/In0. 53Ga0. 47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer …
M Hong, HW Wan, KY Lin, YC Chang, MH Chen, YH Lin, TD Lin, TW Pi, ...
Applied Physics Letters 111 (12), 2017
212017
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
YH Lin, CK Cheng, KH Chen, CH Fu, TW Chang, CH Hsu, J Kwo, M Hong
Materials 8 (10), 7084-7093, 2015
202015
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs (001)
YH Lin, CH Fu, KY Lin, KH Chen, TW Chang, JR Kwo, M Hong
Applied Physics Express 9 (8), 081501, 2016
182016
Surface electronic structure of epi germanium (001)-2× 1
YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ...
Applied Physics Express 10 (7), 075701, 2017
172017
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
CH Fu, YH Lin, WC Lee, TD Lin, RL Chu, LK Chu, P Chang, MH Chen, ...
Microelectronic Engineering 147, 330-334, 2015
172015
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
TW Pi, YH Lin, YT Fanchiang, TH Chiang, CH Wei, YC Lin, GK Wertheim, ...
Nanotechnology 26 (16), 164001, 2015
172015
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
CN Wu, YH Lin, YT Fanchiang, HY Hung, HY Lin, PH Lin, JG Lin, SF Lee, ...
Journal of Applied Physics 117 (17), 17D148, 2015
162015
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
TW Chang, KY Lin, YH Lin, LB Young, J Kwo, M Hong
Microelectronic Engineering 178, 199-203, 2017
132017
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
HW Wan, YH Lin, KY Lin, TW Chang, RF Cai, J Kwo, M Hong
Microelectronic Engineering 178, 154-157, 2017
112017
Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition
YH Lin, KY Lin, WJ Hsueh, LB Young, TW Chang, JI Chyi, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 164-168, 2017
92017
Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ...
ACS nano 16 (2), 2369-2380, 2022
82022
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ...
Applied Physics Letters 118 (25), 252104, 2021
82021
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study
CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ...
Applied Surface Science 393, 294-298, 2017
82017
Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface
YC Liu, YW Chen, SC Tseng, MT Chang, SC Lo, YH Lin, CK Cheng, ...
Applied Physics Letters 107 (12), 122402, 2015
62015
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1018, 2022
52022
Semiconductor device and manufacturing method thereof
M Hong, JN Kwo, Y Lin, KY Lin, Y Bo-Yu, WAN Hsien-Wen
US Patent 10,748,774, 2020
52020
Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
WH Chang, HW Wan, YT Cheng, YHG Lin, T Irisawa, H Ishii, J Kwo, ...
Japanese Journal of Applied Physics 61 (SC), SC1024, 2022
42022
Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
J Song, Y Lin, T Hoshii, H Wakabayashi, K Tsutsui, K Kakushima
Japanese Journal of Applied Physics 59 (SM), SMMB01, 2020
42020
系統目前無法執行作業,請稍後再試。
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