Thickness dependent electronic properties of Pt dichalcogenides RAB Villaos, CP Crisostomo, ZQ Huang, SM Huang, AAB Padama, ...
npj 2D Materials and Applications 3 (1), 1-8, 2019
179 2019 Engineering surface structure of spinel oxides via high-valent vanadium doping for remarkably enhanced electrocatalytic oxygen evolution reaction R Wei, X Bu, W Gao, RAB Villaos, G Macam, ZQ Huang, C Lan, ...
ACS applied materials & interfaces 11 (36), 33012-33021, 2019
83 2019 Predicting two-dimensional topological phases in Janus materials by substitutional doping in transition metal dichalcogenide monolayers AB Maghirang III, ZQ Huang, RAB Villaos, CH Hsu, LY Feng, E Florido, ...
npj 2D Materials and Applications 3 (1), 35, 2019
67 2019 Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin Films MK Lin, RAB Villaos, JA Hlevyack, P Chen, RY Liu, CH Hsu, J Avila, ...
Physical review letters 124 (3), 036402, 2020
62 2020 Anisotropic Rashba splitting in Pt-based janus monolayers PtXY (X, Y= S, Se, or Te) PAL Sino, LY Feng, RAB Villaos, HN Cruzado, ZQ Huang, CH Hsu, ...
Nanoscale Advances 3 (23), 6608-6616, 2021
42 2021 Correlating structural, electronic, and magnetic properties of epitaxial thin films G Chen, ST Howard, AB Maghirang III, K Nguyen Cong, RAB Villaos, ...
Physical Review B 102 (11), 115149, 2020
41 2020 Layer-dependent band engineering of Pd dichalcogenides: a first-principles study LY Feng, RAB Villaos, ZQ Huang, CH Hsu, FC Chuang
New Journal of Physics 22 (5), 053010, 2020
31 2020 Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness RAB Villaos, HN Cruzado, JSC Dizon, AB Maghirang III, ZQ Huang, ...
The Journal of Physical Chemistry C 125 (1), 1134-1142, 2021
28 2021 Magnetic and topological properties in hydrogenated transition metal dichalcogenide monolayers LY Feng, RAB Villaos, HN Cruzado, ZQ Huang, CH Hsu, HC Hsueh, H Lin, ...
Chinese Journal of Physics 66, 15-23, 2020
28 2020 Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te) HN Cruzado, JSC Dizon, GM Macam, RAB Villaos, TMD Huynh, LY Feng, ...
ACS Applied Electronic Materials 3 (3), 1071-1079, 2021
24 2021 Quantum spin Hall insulating phase and van Hove singularities in Zintl single-quintuple-layer AM2X2 (A= Ca, Sr, or Ba; M= Zn or Cd; X= Sb or Bi) family MNR Perez, RAB Villaos, LY Feng, AB Maghirang, CP Cheng, ZQ Huang, ...
Applied Physics Reviews 9 (1), 2022
22 2022 Prediction of topological Dirac semimetal in Ca-based Zintl layered compounds CaM2 X2 (M = Zn or Cd; X = N, P, As, Sb, or Bi) LY Feng, RAB Villaos, AB Maghirang III, ZQ Huang, CH Hsu, H Lin, ...
Scientific reports 12 (1), 4582, 2022
20 2022 CO-induced Pd segregation and the effect of subsurface Pd on CO adsorption on CuPd surfaces AAB Padama, RAB Villaos, JR Albia, WA Diño, H Nakanishi, H Kasai
Journal of Physics: Condensed Matter 29 (2), 025005, 2016
20 2016 Dimensional crossover and band topology evolution in ultrathin semimetallic NiTe2 films JA Hlevyack, LY Feng, MK Lin, RAB Villaos, RY Liu, P Chen, Y Li, SK Mo, ...
npj 2D Materials and Applications 5 (1), 40, 2021
19 2021 High Thermoelectric Performance in 2D Technetium Dichalcogenides TcX2 (X = S, Se, or Te) W Purwitasari, RAB Villaos, IMR Verzola, A Sufyan, ZQ Huang, CH Hsu, ...
ACS Applied Energy Materials 5 (7), 8650-8657, 2022
14 2022 Prediction of van Hove singularities, excellent thermoelectric performance, and non-trivial topology in monolayer rhenium dichalcogenides IMR Verzola, RAB Villaos, W Purwitasari, ZQ Huang, CH Hsu, G Chang, ...
Materials Today Communications 33, 104468, 2022
9 2022 Large Gap Topological Insulating Phase and Anisotropic Rashba and Chiral Spin Textures in Monolayer Zintl A2 MX2 AB Maghirang III, RAB Villaos, MNR Perez, LY Feng, ZQ Huang, CH Hsu, ...
ACS Applied Electronic Materials 4 (11), 5308-5316, 2022
6 2022 Nontrivial topological properties in two-dimensional half-Heusler compounds AB Maghirang III, RAB Villaos, ZQ Huang, CH Hsu, G Chang, FC Chuang
Chinese Journal of Physics 86, 115-121, 2023
4 2023 Nontrivial Topology in Monolayer MA2 Z4 (M = Ti, Zr, or Hf; A = Si or Ge; and Z = N, P, As, Sb, or Bi) IMR Verzola, RAB Villaos, ZQ Huang, CH Hsu, Y Okada, H Lin, ...
The Journal of Physical Chemistry C 128 (16), 6829-6835, 2024
3 2024 Prediction of quantum spin Hall and Rashba effects in two-dimensional ilmenite oxides S Arokiasamy, GM Macam, RAB Villaos, AB Maghirang III, ZQ Huang, ...
Chinese Journal of Physics 86, 242-254, 2023
2 2023