| Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering MV Fischetti, DA Neumayer, EA Cartier Journal of Applied Physics 90 (9), 4587-4608, 2001 | 1010 | 2001 |
| Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon DJ DiMaria, E Cartier, D Arnold Journal of Applied Physics 73 (7), 3367-3384, 1993 | 890 | 1993 |
| Mechanism for stress‐induced leakage currents in thin silicon dioxide films DJ DiMaria, E Cartier Journal of Applied physics 78 (6), 3883-3894, 1995 | 667 | 1995 |
| Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition DA Neumayer, E Cartier Journal of Applied Physics 90 (4), 1801-1808, 2001 | 640 | 2001 |
| High-resolution depth profiling in ultrathin films on Si EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk Applied Physics Letters 76 (2), 176-178, 2000 | 518 | 2000 |
| Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ... Microelectronic Engineering 59 (1-4), 341-349, 2001 | 509 | 2001 |
| Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen E Cartier, JH Stathis, DA Buchanan Applied physics letters 63 (11), 1510-1512, 1993 | 478 | 1993 |
| Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ... IEEE Electron Device Letters 24 (2), 87-89, 2003 | 432 | 2003 |
| Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel Applied Physics Letters 77 (17), 2710-2712, 2000 | 423 | 2000 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 391 | 2001 |
| Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel Journal of Applied Physics 90 (12), 6466-6475, 2001 | 384 | 2001 |
| Theory of high-field electron transport and impact ionization in silicon dioxide D Arnold, E Cartier, DJ DiMaria Physical Review B 49 (15), 10278, 1994 | 379 | 1994 |
| Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks S Zafar, A Kumar, E Gusev, E Cartier IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005 | 359 | 2005 |
| Enabling enhanced reliability and mobility for replacement gate planar and finfet structures T Ando, EA Cartier, K Choi, WL Lai, V Narayanan, R Ramachandran US Patent App. 14/696,015, 2015 | 341 | 2015 |
| Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ... US Patent 7,242,055, 2007 | 335 | 2007 |
| Formation of a stratified lanthanum silicate dielectric by reaction with Si (001) M Copel, E Cartier, FM Ross Applied Physics Letters 78 (11), 1607-1609, 2001 | 322 | 2001 |
| Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ... 2010 symposium on VLSI technology, 21-22, 2010 | 315 | 2010 |
| Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ... Nature nanotechnology 8 (10), 748, 2013 | 293 | 2013 |
| Anode hole injection and trapping in silicon dioxide DJ DiMaria, E Cartier, DA Buchanan Journal of applied physics 80 (1), 304-317, 1996 | 265 | 1996 |
| Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks A Kerber, EA Cartier IEEE Transactions on Device and Materials Reliability 9 (2), 147-162, 2009 | 210 | 2009 |
Matt CopelIBM TJ Watson Research Center在 us.ibm.com 的電子郵件地址已通過驗證
