| A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu IEEE Electron Device Letters 33 (2), 179-181, 2011 | 159 | 2011 |
| A review of sharp-switching devices for ultra-low power applications S Cristoloveanu, J Wan, A Zaslavsky IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016 | 144 | 2016 |
| Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 65, 226-233, 2011 | 143 | 2011 |
| A tunneling field effect transistor model combining interband tunneling with channel transport J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Journal of Applied Physics 110 (10), 2011 | 105 | 2011 |
| An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations Y Wang, H Tang, Y Xie, X Chen, S Ma, Z Sun, Q Sun, L Chen, H Zhu, ... Nature communications 12 (1), 3347, 2021 | 87 | 2021 |
| The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method SY Liu, T Chen, J Wan, GP Ru, BZ Li, XP Qu Applied Physics A 94, 775-780, 2009 | 86 | 2009 |
| A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect F Liao, J Deng, X Chen, Y Wang, X Zhang, J Liu, H Zhu, L Chen, Q Sun, ... Small 16 (1), 1904369, 2020 | 83 | 2020 |
| A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky Solid-State Electronics 76, 109-111, 2012 | 81 | 2012 |
| A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 90, 2-11, 2013 | 79 | 2013 |
| Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 84, 147-154, 2013 | 76 | 2013 |
| Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning X Chen, Y Xie, Y Sheng, H Tang, Z Wang, Y Wang, Y Wang, F Liao, J Ma, ... Nature Communications 12 (1), 5953, 2021 | 72 | 2021 |
| Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide L Tong, J Wan, K Xiao, J Liu, J Ma, X Guo, L Zhou, X Chen, Y Xia, S Dai, ... Nature Electronics 6 (1), 37-44, 2023 | 71 | 2023 |
| Precise extraction of charge carrier mobility for organic transistors Y Xu, Y Li, S Li, F Balestra, G Ghibaudo, W Li, YF Lin, H Sun, J Wan, ... Advanced Functional Materials 30 (20), 1904508, 2020 | 63 | 2020 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 59 | 2018 |
| Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer J Wan, SR Deng, R Yang, Z Shu, BR Lu, SQ Xie, Y Chen, E Huq, R Liu, ... Microelectronic Engineering 86 (4-6), 1238-1242, 2009 | 56 | 2009 |
| Low-frequency noise behavior of tunneling field effect transistors J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Applied Physics Letters 97 (24), 2010 | 54 | 2010 |
| Methods of forming nanowire devices with doped extension regions and the resulting devices SM Koh, G Bouche, J Wan, AC Wei US Patent 9,490,340, 2016 | 53 | 2016 |
| Self-aligned gate contact formation G Bouche, ACH Wei, GP Wells, AP Labonte, J Wan US Patent 9,640,625, 2017 | 51 | 2017 |
| Z2-FET: A promising FDSOI device for ESD protection Y Solaro, J Wan, P Fonteneau, C Fenouillet-Beranger, C Le Royer, ... Solid-state electronics 97, 23-29, 2014 | 51 | 2014 |
| A 619-pixel machine vision enhancement chip based on two-dimensional semiconductors S Ma, T Wu, X Chen, Y Wang, J Ma, H Chen, A Riaud, J Wan, Z Xu, ... Science Advances 8 (31), eabn9328, 2022 | 46 | 2022 |
Francisco GamizProfessor of Electronics在 ugr.es 的電子郵件地址已通過驗證
