Liquid droplet dispersions formed by homogeneous liquid− liquid nucleation:“The Ouzo Effect” SA Vitale, JL Katz
Langmuir 19 (10), 4105-4110, 2003
530 2003 Manufacturing a semiconductive device using a controlled atomic layer removal process SA Vitale
US Patent 7,494,882, 2009
413 2009 Valleytronics: opportunities, challenges, and paths forward SA Vitale, D Nezich, JO Varghese, P Kim, N Gedik, P Jarillo‐Herrero, ...
Small 14 (38), 1801483, 2018
315 2018 Silicon etching yields in SA Vitale, H Chae, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001
147 2001 Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials C Ríos, Q Du, Y Zhang, CC Popescu, MY Shalaginov, P Miller, C Roberts, ...
PhotoniX 3 (1), 26, 2022
141 2022 FDSOI process technology for subthreshold-operation ultralow-power electronics SA Vitale, PW Wyatt, N Checka, J Kedzierski, CL Keast
Proceedings of the IEEE 98 (2), 333-342, 2010
136 2010 Work-function-tuned TiN metal gate FDSOI transistors for subthreshold operation SA Vitale, J Kedzierski, P Healey, PW Wyatt, CL Keast
IEEE Transactions on Electron Devices 58 (2), 419-426, 2010
127 2010 Plasma–surface kinetics and simulation of feature profile evolution in W Jin, SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002
115 2002 Multi‐level electro‐thermal switching of optical phase‐change materials using graphene C Ríos, Y Zhang, MY Shalaginov, S Deckoff-Jones, H Wang, S An, ...
Advanced Photonics Research 2 (1), 2000034, 2021
92 2021 Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching SA Vitale, BA Smith
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
91 2003 Progress toward diamond power field‐effect transistors MW Geis, TC Wade, CH Wuorio, TH Fedynyshyn, B Duncan, ME Plaut, ...
physica status solidi (a) 215 (22), 1800681, 2018
81 2018 Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ...
Nature Nanotechnology 18 (5), 456-463, 2023
58 2023 Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device F Mehrad, S Yu, SA Vitale, JG Tran
US Patent 7,727,842, 2010
49 2010 Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in SA Vitale, H Chae, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (6 …, 2000
49 2000 Etching of organosilicate glass low-k dielectric films in halogen plasmas SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002
45 2002 Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance T Wade, MW Geis, TH Fedynyshyn, SA Vitale, JO Varghese, DM Lennon, ...
Diamond and Related Materials 76, 79-85, 2017
44 2017 Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas H Chae, SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (2 …, 2003
40 2003 The effect of a carbon-carbon double bond on electron beam-generated plasma decomposition of trichloroethylene and 1, 1, 1-trichloroethane SA Vitale, K Hadidi, DR Cohn, P Falkos
Plasma Chemistry and Plasma Processing 17, 59-78, 1997
32 1997 Transient tap couplers for wafer-level photonic testing based on optical phase change materials Y Zhang, Q Zhang, C Ríos, MY Shalaginov, JB Chou, C Roberts, P Miller, ...
ACS Photonics 8 (7), 1903-1908, 2021
28 2021 Chemical and semiconducting properties of NO2-activated H-terminated diamond MW Geis, TH Fedynyshyn, ME Plaut, TC Wade, CH Wuorio, SA Vitale, ...
Diamond and Related Materials 84, 86-94, 2018
24 2018 
Joseph L KatzJohns Hopkins, Clarkson, University of Chicago, North American Aviation, RockwellDirección de correo verificada de jhu.edu
