Ching-Ting Lee
Ching-Ting Lee
Verified email at ee.ncku.edu.tw
TitleCited byYear
Versatile Insensitive Current-Mode Universal Biquad Implementation Using Current Conveyors
HYWCT Lee
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 2001
1732001
Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN
CT Lee, HW Kao
Applied Physics Letters 76 (17), 2364-2366, 2000
1672000
Metal–oxide–semiconductor devices using dielectrics on -type GaN
CT Lee, HW Chen, HY Lee
Applied physics letters 82 (24), 4304-4306, 2003
1642003
ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique
RW Chuang, RX Wu, LW Lai, CT Lee
Applied Physics Letters 91 (23), 231113, 2007
1382007
Ultraviolet photodetectors with ZnO nanowires prepared on ZnO: Ga/glass templates
CY Lu, SJ Chang, SP Chang, CT Lee, CF Kuo, HM Chang, YZ Chiou, ...
Applied physics letters 89 (15), 153101, 2006
1212006
Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
QX Yu, B Xu, QH Wu, Y Liao, GZ Wang, RC Fang, HY Lee, CT Lee
Applied physics letters 83 (23), 4713-4715, 2003
1172003
A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films
JD Guo, CI Lin, MS Feng, FM Pan, GC Chi, CT Lee
Applied physics letters 68 (2), 235-237, 1996
1141996
Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers
SJ Chang, LW Wu, YK Su, YP Hsu, WC Lai, JM Tsai, JK Sheu, CT Lee
IEEE Photonics Technology Letters 16 (6), 1447-1449, 2004
1022004
Investigation of optical and electrical properties of ZnO thin films
LW Lai, CT Lee
Materials Chemistry and Physics 110 (2-3), 393-396, 2008
982008
Nitride-based flip-chip ITO LEDs
SJ Chang, CS Chang, YK Su, CT Lee, WS Chen, CF Shen, YP Hsu, ...
IEEE transactions on advanced packaging 28 (2), 273-277, 2005
932005
White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes
CT Lee, UZ Yang, CS Lee, PS Chen
IEEE photonics technology letters 18 (19), 2029-2031, 2006
842006
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs
YP Hsu, SJ Chang, YK Su, JK Sheu, CT Lee, TC Wen, LW Wu, CH Kuo, ...
Journal of Crystal Growth 261 (4), 466-470, 2004
802004
Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes
CT Lee
Materials 3 (4), 2218-2259, 2010
782010
Nitride-based LEDs with textured side walls
CS Chang, SJ Chang, YK Su, CT Lee, YC Lin, WC Lai, SC Shei, JC Ke, ...
IEEE Photonics Technology Letters 16 (3), 750-752, 2004
712004
Schottky barrier height and surface state density of Ni/Au contacts to -treated n-type GaN
CT Lee, YJ Lin, DS Liu
Applied Physics Letters 79 (16), 2573-2575, 2001
662001
Systematic synthesis of RL and CD immittances using single CCIII
HY Wang, CT Lee
International Journal of Electronics 87 (3), 293-301, 2000
662000
Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to GaN
YJ Lin, CT Lee
Applied Physics Letters 77 (24), 3986-3988, 2000
642000
AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method
LH Huang, SH Yeh, CT Lee, H Tang, J Bardwell, JB Webb
IEEE electron device letters 29 (4), 284-286, 2008
622008
GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method
CT Lee, HY Lee, HW Chen
IEEE Electron Device Letters 24 (2), 54-56, 2003
622003
Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode
JT Yan, CT Lee
Sensors and Actuators B: Chemical 143 (1), 192-197, 2009
612009
The system can't perform the operation now. Try again later.
Articles 1–20