| Nanowire transistors without junctions JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ... Nature nanotechnology 5 (3), 225-229, 2010 | 2900 | 2010 |
| Junctionless multigate field-effect transistor CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge Applied Physics Letters 94 (5), 2009 | 1369 | 2009 |
| Junctionless Nanowire Transistor (JNT): Properties and design guidelines A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ... Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010 | 726* | 2010 |
| Junctionless nanowire transistor (JNT): properties and design guidelines A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ... Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010 | 726* | 2010 |
| Performance estimation of junctionless multigate transistors CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge Solid-State Electronics 54 (2), 97-103, 2010 | 649 | 2010 |
| High-temperature performance of silicon junctionless MOSFETs CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ... IEEE transactions on electron devices 57 (3), 620-625, 2010 | 449 | 2010 |
| Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 2010 | 380 | 2010 |
| Junctionless Multiple Gate Transistors Performance for Analog Applications RT Doria, MA Pavanello, CW Lee, I Ferain, N Dehdashti, JP Colinge Proceedings EUROSOI Conference, 79-80, 2010 | 289* | 2010 |
| Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 2010 | 281 | 2010 |
| SOI gated resistor: CMOS without junctions JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ... 2009 IEEE International SOI Conference, 1-2, 2009 | 189 | 2009 |
| Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011 | 161 | 2011 |
| Mercury (II) selective sensors based on AlGaN/GaN transistors M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ... Analytica chimica acta 943, 1-7, 2016 | 82 | 2016 |
| Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ... Journal of Electronic Materials 44, 158-166, 2015 | 81 | 2015 |
| Mobility Improvement in Nanowire Junctionless Transistors by Uniaxial Strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, N Dehdashti, R Yan, ... SOI Conference, 2009 IEEE International, 2010 | 63 | 2010 |
| Improvement of carrier ballisticity in junctionless nanowire transistors N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (10), 2011 | 62 | 2011 |
| Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 59 | 2010 |
| Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ... Science of Advanced Materials 3 (3), 477-482, 2011 | 53 | 2011 |
| Short-channel junctionless nanowire transistors CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ... Proc. SSDM, 1044-1045, 2010 | 50 | 2010 |
| A method of removing the valence band discontinuity in HgCdTe-based nBn detectors ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone Applied Physics Letters 105 (12), 2014 | 48 | 2014 |
| Superlattice barrier HgCdTe nBn infrared photodetectors: Validation of the effective mass approximation ND Akhavan, GA Umana-Membreno, R Gu, M Asadnia, J Antoszewski, ... IEEE Transactions on Electron Devices 63 (12), 4811-4818, 2016 | 47 | 2016 |
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