| Design and modeling of GeSn-based heterojunction phototransistors for communication applications GE Chang, R Basu, B Mukhopadhyay, PK Basu IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 425-433, 2016 | 82 | 2016 |
| Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm R Basu, V Chakraborty, B Mukhopadhyay, PK Basu 2013 International Conference on Microwave and Photonics (ICMAP), 1-5, 2013 | 40* | 2013 |
| Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μm | 40* | |
| Semiconductor Laser Theory BMRB P. K. Basu CRC Press, Boca Raton, FL, USA., 2016 | 38* | 2016 |
| Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy B Mukhopadhyay, G Sen, R Basu, S Mukhopadhyay, PK Basu physica status solidi (b) 254 (11), 1700244, 2017 | 34 | 2017 |
| Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base WT Hung, D Barshilia, R Basu, HH Cheng, GE Chang Optics Letters 45 (5), 1088-1091, 2020 | 32 | 2020 |
| Optimized Ge1−xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection AK Pandey, R Basu, GE Chang IEEE Sensors Journal 18 (14), 5842-5852, 2018 | 26 | 2018 |
| Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base R Basu, B Mukhopadhyay, PK Basu Semiconductor science and technology 26 (10), 105014, 2011 | 25 | 2011 |
| Modeling resonance-free modulation response in transistor lasers with single and multiple quantum wells in the base R Basu, B Mukhopadhyay, PK Basu IEEE Photonics Journal 4 (5), 1572-1581, 2012 | 24 | 2012 |
| Comprehensive analysis and optimal design of Ge/GeSn/Ge pnp infrared heterojunction phototransistors AK Pandey, R Basu, H Kumar, GE Chang IEEE Journal of the Electron Devices Society 7, 118-126, 2018 | 22 | 2018 |
| Fluoride glass-based surface plasmon resonance sensor in infrared region: Performance evaluation AK Pandey, AK Sharma, R Basu Journal of Physics D: Applied Physics 50 (18), 185103, 2017 | 19 | 2017 |
| Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base R Basu, B Mukhopadhyay, PK Basu IET Optoelectronics 7 (3), 71-76, 2013 | 19 | 2013 |
| Temperature analysis of a dopingless TFET considering interface trap charges for enhanced reliability BK Suruchi Sharma, Rikmantra Basu IEEE Transaction on Electron Devices, 2022 | 15 | 2022 |
| Effect of Defects on the Performance of Si-based GeSn/Ge Mid-Infrared Phototransistors HKR Basu IEEE Sensors Journal, 2021 | 15* | 2021 |
| Effect of defects on the performance of Si-based GeSn/Ge mid-infrared phototransistors H Kumar, R Basu IEEE Sensors Journal 21 (5), 5975-5982, 2020 | 15 | 2020 |
| Simulation and performance evaluation of fiber optic sensor for detection of hepatic malignancies in human liver tissues AK Sharma, J Gupta, R Basu Optics & Laser Technology 98, 291-297, 2018 | 15 | 2018 |
| A weighted ensemble model for prediction of infectious diseases K Shashvat, R Basu, AP Bhondekar, A Kaur Current Pharmaceutical Biotechnology 20 (8), 674-678, 2019 | 14 | 2019 |
| Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor V Chakraborty, S Dey, R Basu, B Mukhopadhyay, PK Basu Optical and Quantum Electronics 49 (3), 1-13, 2017 | 14 | 2017 |
| Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors H Kumar, R Basu IEEE Transactions on Electron Devices 66 (9), 3867-3873, 2019 | 13 | 2019 |
| Noise analysis of group IV material-based heterojunction phototransistor for fiber-optic telecommunication networks H Kumar, R Basu IEEE Sensors Journal 18 (22), 9180-9187, 2018 | 13 | 2018 |
