追蹤
Huang-Chun Wen
Huang-Chun Wen
在 ti.com 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ...
Applied Physics Letters 92 (9), 092901, 2008
2082008
Work function engineering using lanthanum oxide interfacial layers
HN Alshareef, M Quevedo-Lopez, HC Wen, R Harris, P Kirsch, P Majhi, ...
Applied physics letters 89 (23), 232103-232103-3, 2006
1332006
Dual work function metal gates using full nickel silicidation of doped poly-Si
JH Sim, HC Wen, JP Lu, DL Kwong
IEEE Electron Device Letters 24 (10), 631-633, 2003
872003
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ...
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International …, 2004
842004
In 0.53 Ga 0.47 As based metal oxide semiconductor capacitors with atomic layer deposition ZrO 2 gate oxide demonstrating low gate leakage current and equivalent oxide …
S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ...
Applied Physics Letters 92 (22), 222904-222904-3, 2008
832008
Control and stability of self-assembled monolayers under biosensing conditions
O Seitz, PG Fernandes, R Tian, N Karnik, HC Wen, H Stiegler, ...
Journal of Materials Chemistry 21 (12), 4384-4392, 2011
772011
Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High-Gate Stacks
G Bersuker, CS Park, HC Wen, K Choi, J Price, P Lysaght, HH Tseng, ...
Electron Devices, IEEE Transactions on 57 (9), 2047-2056, 2010
772010
Metal gate work function engineering using interfacial layers
HN Alshareef, HF Luan, K Choi, HR Harris, HC Wen, MA Quevedo-Lopez, ...
Applied physics letters 88 (11), 112114, 2006
722006
Dual-work-function metal gates by full silicidation of Poly-Si with Co-Ni bi-layers
J Liu, HC Wen, JP Lu, DL Kwong
IEEE electron device letters 26 (4), 228-230, 2005
702005
Growth mechanism of TiN film on dielectric films and the effects on the work function
K Choi, P Lysaght, H Alshareef, C Huffman, HC Wen, R Harris, H Luan, ...
Thin Solid Films 486 (1), 141-144, 2005
642005
Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
HC Wen, P Majhi, K Choi, CS Park, HN Alshareef, H Rusty Harris, H Luan, ...
Microelectronic Engineering 85 (1), 2-8, 2008
612008
Comparison of effective work function extraction methods using capacitance and current measurement techniques
HC Wen, R Choi, GA Brown, T BosckeBoscke, K Matthews, HR Harris, ...
Electron Device Letters, IEEE 27 (7), 598-601, 2006
612006
Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric
HN Alshareef, HR Harris, HC Wen, CS Park, C Huffman, K Choi, HF Luan, ...
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on, 7-8, 2006
592006
The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode
K Choi, HC Wen, H Alshareef, R Harris, P Lysaght, H Luan, P Majhi, ...
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of …, 2005
582005
Effective work function modification of atomic-layer-deposited-TaN film by capping layer
K Choi, HN Alshareef, HC Wen, H Harris, H Luan, Y Senzaki, P Lysaght, ...
Applied physics letters 89 (3), 032113, 2006
532006
Composition dependence of the work function of Ta 1-x Al x N y metal gates
HN Alshareef, K Choi, HC Wen, H Luan, H Harris, Y Senzaki, P Majhi, ...
Applied physics letters 88 (7), 072108-072108-3, 2006
502006
Mechanism of flatband voltage roll-off studied with AlO film deposited on terraced oxide
K Choi, HC Wen, G Bersuker, R Harris, BH Lee
Applied Physics Letters 93, 133506, 2008
432008
SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors
PG Fernandes, HJ Stiegler, M Zhao, KD Cantley, B Obradovic, ...
Sensors and Actuators B: Chemical 161 (1), 163-170, 2012
402012
Three-layer laminated metal gate electrodes with tunable work functions for CMOS applications
WP Bai, SH Bae, HC Wen, S Mathew, LK Bera, N Balasubramanian, ...
IEEE electron device letters 26 (4), 231-233, 2005
382005
Thermal response of Ru electrodes in contact with SiO 2 and Hf-based high-k gate dielectrics
HC Wen, P Lysaght, HN Alshareef, C Huffman, HR Harris, K Choi, ...
Journal of applied physics 98 (4), 043520-043520-6, 2005
362005
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