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Sa Hoang Huynh
Sa Hoang Huynh
Ph.D, Senior Engineer, MBE Center, IQE plc
Verified email at iqep.com
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Cited by
Cited by
Year
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
CW Liu, JJ Dai, SK Wu, NQ Diep, SH Huynh, TT Mai, HC Wen, CT Yuan, ...
Scientific reports 10 (1), 12972, 2020
272020
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect …
QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ...
IEEE Electron Device Letters 37 (8), 974-977, 2016
272016
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack
QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ...
2018 IEEE Symposium on VLSI Technology, 47-48, 2018
222018
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ...
IEEE Electron Device Letters 39 (3), 339-342, 2018
202018
Screw-dislocation-driven growth mode in two dimensional GaSe on GaAs (001) substrates grown by molecular beam epitaxy
NQ Diep, CW Liu, SK Wu, WC Chou, SH Huynh, EY Chang
Scientific reports 9 (1), 17781, 2019
192019
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang
Applied Physics Letters 109 (10), 2016
172016
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, C Hu, YC Lin, ...
IEEE Electron Device Letters 38 (5), 552-555, 2017
102017
Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask
JJ Dai, CW Liu, SK Wu, SH Huynh, JG Jiang, SA Yen, TT Mai, HC Wen, ...
Coatings 11 (1), 16, 2020
92020
Methods for extracting flat band voltage in the InGaAs high mobility materials
HB Do, QH Luc, MTH Ha, SH Huynh, C Hu, YC Lin, EY Chang
IEEE Electron Device Letters 37 (9), 1100-1103, 2016
92016
Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
NQ Diep, SK Wu, CW Liu, SH Huynh, WC Chou, CM Lin, DZ Zhang, ...
Scientific reports 11 (1), 19887, 2021
72021
Molecular beam epitaxy of two-dimensional GaTe nanostructures on GaAs (001) substrates: implication for near-infrared photodetection
SH Huynh, NQ Diep, TV Le, SK Wu, CW Liu, DL Nguyen, HC Wen, ...
ACS Applied Nano Materials 4 (9), 8913-8921, 2021
72021
Materials growth and band offset determination of Al2O3/In0. 15Ga0. 85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang
Applied Physics Letters 110 (2), 2017
72017
Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor …
MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, EY Chang
Materials Research Express 4 (8), 085901, 2017
62017
Growth of high-quality In0. 28Ga0. 72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide …
SH Huynh, MTH Ha, HB Do, TA Nguyen, HW Yu, QH Luc, EY Chang
Applied Physics Express 10 (7), 075505, 2017
62017
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
HB Do, QH Luc, MTH Ha, SH Huynh, CC Hu, YC Lin, EY Chang
IEEE Transactions on Electron Devices 63 (12), 4714-4719, 2016
62016
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, YC Lin, EY Chang
AIP Advances 7 (8), 2017
42017
Nonlinear dependence of X-ray diffraction peak broadening in InxGa1− xSb epitaxial layers on GaAs substrates
SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang
Applied Physics Express 11 (4), 045503, 2018
32018
The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition
MTH Ha, SH Huynh, HB Do, CT Lee, QH Luc, EY Chang
Thin Solid Films 669, 430-435, 2019
22019
Entirely relaxed lattice-mismatched GaSb/GaAs/Si (001) heterostructure grown via metalorganic chemical vapor deposition
MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, CT Lee, EY Chang
Applied Physics Express 11 (5), 051202, 2018
22018
Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate
HW Yu, D Anandan, CY Hsu, YC Hung, CJ Su, CT Wu, RK Kakkerla, ...
Journal of Electronic Materials 47, 1071-1079, 2018
22018
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