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Sa Hoang Huynh
Sa Hoang Huynh
Ph.D, Senior Engineer, MBE Center, IQE plc
Verified email at iqep.com
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Cited by
Year
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
CW Liu, JJ Dai, SK Wu, NQ Diep, SH Huynh, TT Mai, HC Wen, CT Yuan, ...
Scientific reports 10 (1), 12972, 2020
362020
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect …
QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ...
IEEE Electron Device Letters 37 (8), 974-977, 2016
272016
Screw-dislocation-driven growth mode in two dimensional GaSe on GaAs (001) substrates grown by molecular beam epitaxy
NQ Diep, CW Liu, SK Wu, WC Chou, SH Huynh, EY Chang
Scientific reports 9 (1), 17781, 2019
232019
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack
QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ...
2018 IEEE Symposium on VLSI Technology, 47-48, 2018
222018
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ...
IEEE Electron Device Letters 39 (3), 339-342, 2018
202018
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang
Applied Physics Letters 109 (10), 2016
162016
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, C Hu, YC Lin, ...
IEEE Electron Device Letters 38 (5), 552-555, 2017
112017
Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
NQ Diep, SK Wu, CW Liu, SH Huynh, WC Chou, CM Lin, DZ Zhang, ...
Scientific reports 11 (1), 19887, 2021
102021
Methods for extracting flat band voltage in the InGaAs high mobility materials
HB Do, QH Luc, MTH Ha, SH Huynh, C Hu, YC Lin, EY Chang
IEEE Electron Device Letters 37 (9), 1100-1103, 2016
102016
Molecular beam epitaxy of two-dimensional GaTe nanostructures on GaAs (001) substrates: implication for near-infrared photodetection
SH Huynh, NQ Diep, TV Le, SK Wu, CW Liu, DL Nguyen, HC Wen, ...
ACS Applied Nano Materials 4 (9), 8913-8921, 2021
92021
Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask
JJ Dai, CW Liu, SK Wu, SH Huynh, JG Jiang, SA Yen, TT Mai, HC Wen, ...
Coatings 11 (1), 16, 2020
92020
Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor …
MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, EY Chang
Materials Research Express 4 (8), 085901, 2017
72017
Materials growth and band offset determination of Al2O3/In0. 15Ga0. 85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang
Applied Physics Letters 110 (2), 2017
72017
Growth of high-quality In0. 28Ga0. 72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide …
SH Huynh, MTH Ha, HB Do, TA Nguyen, HW Yu, QH Luc, EY Chang
Applied Physics Express 10 (7), 075505, 2017
62017
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
HB Do, QH Luc, MTH Ha, SH Huynh, CC Hu, YC Lin, EY Chang
IEEE Transactions on Electron Devices 63 (12), 4714-4719, 2016
62016
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, YC Lin, EY Chang
AIP Advances 7 (8), 2017
52017
Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe 1− x Te x semiconductors for visible to near-infrared photodetection
NQ Diep, YX Chen, DL Nguyen, MN Duong, SK Wu, CW Liu, HC Wen, ...
Journal of Materials Chemistry C 11 (5), 1772-1781, 2023
42023
Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection
NQ Diep, QT Tran, TBT Huynh, HC Wen, WC Chou, SH Huynh, VQ Le, ...
ACS Applied Nano Materials 7 (3), 3042-3049, 2024
32024
Entirely relaxed lattice-mismatched GaSb/GaAs/Si (001) heterostructure grown via metalorganic chemical vapor deposition
MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, CT Lee, EY Chang
Applied Physics Express 11 (5), 051202, 2018
32018
Nonlinear dependence of X-ray diffraction peak broadening in InxGa1− xSb epitaxial layers on GaAs substrates
SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang
Applied Physics Express 11 (4), 045503, 2018
32018
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