| Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ... Crystal Growth & Design 16 (6), 3409-3415, 2016 | 126 | 2016 |
| Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN T Ayari, S Sundaram, X Li, Y El Gmili, PL Voss, JP Salvestrini, ... Applied Physics Letters 108 (17), 2016 | 87 | 2016 |
| Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ... Scientific reports 7 (1), 15212, 2017 | 64 | 2017 |
| Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ... Scientific reports 7 (1), 786, 2017 | 50 | 2017 |
| Heterogeneous integration of thin-film InGaN-based solar cells on foreign substrates with enhanced performance T Ayari, S Sundaram, X Li, S Alam, C Bishop, W El Huni, MB Jordan, ... ACS photonics 5 (8), 3003-3008, 2018 | 22 | 2018 |
| Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride S Sundaram, X Li, Y Halfaya, T Ayari, G Patriarche, C Bishop, S Alam, ... Advanced Materials Interfaces 6 (16), 1900207, 2019 | 19 | 2019 |
| Novel scalable transfer approach for discrete III‐nitride devices using wafer‐scale patterned H‐BN/sapphire substrate for pick‐and‐place applications T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1900164, 2019 | 16 | 2019 |
| Single crystalline boron rich B (Al) N alloys grown by MOVPE P Vuong, A Mballo, S Sundaram, G Patriarche, Y Halfaya, S Karrakchou, ... Applied Physics Letters 116 (4), 2020 | 15 | 2020 |
| MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics S Sundaram, P Vuong, A Mballo, T Ayari, S Karrakchou, G Patriarche, ... APL Materials 9 (6), 2021 | 13 | 2021 |
| Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Scientific Reports 10 (1), 21709, 2020 | 13 | 2020 |
| Nanopyramid-based absorber to boost the efficiency of InGaN solar cells W El Huni, S Karrakchou, Y Halfaya, M Arif, MB Jordan, R Puybaret, ... Solar Energy 190, 93-103, 2019 | 12 | 2019 |
| MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates S Sundaram, X Li, S Alam, T Ayari, Y Halfaya, G Patriarche, PL Voss, ... Journal of Crystal Growth 507, 352-356, 2019 | 9 | 2019 |
| Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor NY Sama, A Hathcock, D He, TQP Vuong, S Karrakchou, T Ayari, ... 2019 IEEE SENSORS, 1-4, 2019 | 4 | 2019 |
| Method for large scale growth and fabrication of iii-nitride devices on 2d-layered h-bn without spontaneous delamination T Ayari, A Ougaz-Zaden, S Sundaram US Patent App. 17/613,563, 2022 | | 2022 |
| Side-by-side comparison of pre-and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Gallium Nitride Materials and Devices XVI 11686, 1168619, 2021 | | 2021 |
| Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1970057, 2019 | | 2019 |
| Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications … T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1970057, 2019 | | 2019 |
| Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) S Sundaram, X Li, Y Halfaya, T Ayari, G Patriarche, C Bishop, S Alam, ... Advanced Materials Interfaces 6 (16), 1970102, 2019 | | 2019 |
| Design and fabrication of nitride-based solar cells and integration for tandem cell T Ayari École Doctorale de génie électrique et informatique, 2018 | | 2018 |
| Van der Waal Epitaxy investigation of GaN-based materials on 2D h-BN by MOVPE for high performance opto-electronic devices AO Taha Ayari, Suresh Sundaram, Saiful Alam, Adama Mballo, Yacine Halfaya ... EMRS, 2018 | | 2018 |
