chenming hu

引用次數

	全部	自 2020 年
引文	88774	16411
H 指數	148	58
i10 指數	989	309

3800

1900

950

2850

198719881989199019911992199319941995199619971998199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025237 338 460 486 517 650 918 912 1002 1111 1210 1388 1473 1572 1906 1903 2217 2576 2844 3139 3228 3183 2966 3169 3240 3141 3645 3691 3505 3744 3585 3622 3309 3187 3451 3337 3101 3120 210

公開取用

查看全部

33 篇文章

34 篇文章

可供使用

無法使用

根據資金強制性政策

共同作者

Tsu-Jae King LiuUniversity of California在 eecs.berkeley.edu 的電子郵件地址已通過驗證
Yee-Chia YeoNational University of Singapore在 nus.edu.sg 的電子郵件地址已通過驗證
Sayeef SalahuddinTSMC Distinguished Professor of EECS, University of California, Berkeley在 berkeley.edu 的電子郵件地址已通過驗證
Leland ChangIBM在 us.ibm.com 的電子郵件地址已通過驗證
Jeffrey Bokor Professor of electrical engineering and computer sciences, University of California, Berkeley在 eecs.berkeley.edu 的電子郵件地址已通過驗證
Mansun ChanChair Professor, HKUST在 ust.hk 的電子郵件地址已通過驗證
Ali M NIKNEJADUC Berkeley在 berkeley.edu 的電子郵件地址已通過驗證
Yang-Kyu ChoiProfessor of Electrical Engineering, KAIST在 ee.kaist.ac.kr 的電子郵件地址已通過驗證
AssaderaghiSiTime在 sitime.com 的電子郵件地址已通過驗證
Darsen LuNCKU在 cal.berkeley.edu 的電子郵件地址已通過驗證
Hideki TakeuchiAtomera在 atomera.com 的電子郵件地址已通過驗證
Dennis SylvesterProfessor of Electrical Engineering and Computer Science, University of Michigan在 umich.edu 的電子郵件地址已通過驗證
Vivek SubramanianEcole polytechnique Federale de Lausanne (EPFL)在 epfl.ch 的電子郵件地址已通過驗證
Sriramkumar VenugopalanSemiconductors Professional在 eecs.berkeley.edu 的電子郵件地址已通過驗證
Michael OrshanskyUniversity of Texas at Austin在 utexas.edu 的電子郵件地址已通過驗證
Yu CaoProfessor, University of Minnesota在 umn.edu 的電子郵件地址已通過驗證
Pin SuNational Chiao Tung University在 faculty.nctu.edu.tw 的電子郵件地址已通過驗證
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC Berkeley在 ece.ucsb.edu 的電子郵件地址已通過驗證
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC Berkeley在 berkeley.edu 的電子郵件地址已通過驗證
Stephen E HollandLawrence Berkeley National Laboratory在 lbl.gov 的電子郵件地址已通過驗證

追蹤

chenming hu

University of California, Berkeley

在 eecs.berkeley.edu 的電子郵件地址已通過驗證 - 首頁

engineering


標題按引用次數排序按年份排序按標題排序	引用次數引用次數	年份
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ... IEEE transactions on electron devices 47 (12), 2320-2325, 2000	2398	2000
Hot-electron-induced MOSFET degradation-model, monitor, and improvement C Hu, SC Tam, FC Hsu, PK Ko, TY Chan, KW Terrill IEEE Journal of Solid-State Circuits 20 (1), 295-305, 1985	1983	1985
MoS2 transistors with 1-nanometer gate lengths SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354 (6308), 99-102, 2016	1557	2016
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors KK Hung, PK Ko, C Hu, YC Cheng IEEE Transactions on Electron Devices 37 (3), 654-665, 1990	1084	1990
Modern semiconductor devices for integrated circuits C Hu (No Title), 2010	936	2010
FinFET scaling to 10 nm gate length B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ... Digest. International Electron Devices Meeting,, 251-254, 2002	875	2002
Sub 50-nm finfet: Pmos X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	850	1999
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation Y Cao, T Sato, M Orshansky, D Sylvester, C Hu Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No …, 2000	725	2000
Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020	723	2020
Hole injection SiO/sub 2/breakdown model for very low voltage lifetime extrapolation KF Schuegraf, C Hu IEEE transactions on electron devices 41 (5), 761-767, 1994	720	1994
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ... US Patent 6,413,802, 2002	693	2002
MOSFET modeling & BSIM3 user’s guide Y Cheng, C Hu Springer Science & Business Media, 2007	654	2007
MOS capacitance measurements for high-leakage thin dielectrics KJ Yang, C Hu IEEE Transactions on Electron Devices 46 (7), 1500-1501, 1999	646	1999
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu IEEE Transactions on Electron Devices 44 (3), 414-422, 1997	636	1997
Electrical breakdown in thin gate and tunneling oxides IC Chen, SE Holland, C Hu IEEE journal of Solid-state Circuits 20 (1), 333-342, 1985	632	1985
Sub-50 nm P-channel FinFET X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... IEEE Transactions on Electron Devices 48 (5), 880-886, 2001	621	2001
Lucky-electron model of channel hot-electron injection in MOSFET's S Tam, PK Ko, C Hu IEEE transactions on electron devices 31 (9), 1116-1125, 1984	606	1984
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology YC Yeo, TJ King, C Hu Journal of applied physics 92 (12), 7266-7271, 2002	591	2002
Threshold voltage model for deep-submicrometer MOSFETs ZH Liu, C Hu, JH Huang, TY Chan, MC Jeng, PK Ko, YC Cheng IEEE Transactions on electron devices 40 (1), 86-95, 1993	588	1993
Immersion fluid for immersion lithography, and method of performing immersion lithography YC Yeo, BJ Lin, C Hu US Patent 7,700,267, 2010	537	2010

系統目前無法執行作業，請稍後再試。

文章 1–20

每年的引文數

重複引用

合併引文

新增共同作者共同作者

追蹤

引用次數

共同作者