| Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy Z Gačević, D Gomez Sanchez, E Calleja Nano letters 15 (2), 1117-1121, 2015 | 119 | 2015 |
| Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Ž Gačević, A Das, J Teubert, Y Kotsar, PK Kandaswamy, T Kehagias, ... Journal of Applied Physics 109 (10), 2011 | 92 | 2011 |
| A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy S Fernández-Garrido, Ž Gačević, E Calleja Applied Physics Letters 93 (19), 2008 | 65 | 2008 |
| A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ... Journal of crystal growth 364, 123-127, 2013 | 56 | 2013 |
| Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k× p modelling N Vukmirović, Ž Gačević, Z Ikonić, D Indjin, P Harrison, V Milanović Semiconductor science and technology 21 (8), 1098, 2006 | 55 | 2006 |
| Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires Z Gačević, M Holmes, E Chernysheva, M Müller, A Torres-Pardo, ... ACS Photonics 4 (3), 657-664, 2017 | 54 | 2017 |
| High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy Ž Gačević, S Fernández-Garrido, JM Rebled, S Estradé, F Peiró, E Calleja Applied Physics Letters 99 (3), 2011 | 37 | 2011 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 36 | 2017 |
| A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control Ž Gačević, D López-Romero, T Juan Mangas, E Calleja Applied Physics Letters 108 (3), 2016 | 34 | 2016 |
| Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy A Eljarrat, S Estradé, Ž Gačević, S Fernández-Garrido, E Calleja, ... Microscopy and Microanalysis 18 (5), 1143-1154, 2012 | 31 | 2012 |
| Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays E Chernysheva, Ž Gačević, N García-Lepetit, HP Van der Meulen, ... Europhysics Letters 111 (2), 24001, 2015 | 30 | 2015 |
| Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ... Physical Review B 93 (12), 125436, 2016 | 27 | 2016 |
| Crystallographically uniform arrays of ordered (In) GaN nanocolumns Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ... Journal of Applied Physics 117 (3), 2015 | 27 | 2015 |
| InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy Ž Gačević, S Fernández-Garrido, D Hosseini, S Estradé, F Peiró, ... Journal of Applied Physics 108 (11), 2010 | 26 | 2010 |
| Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja Applied Physics Letters 108 (25), 2016 | 23 | 2016 |
| Impact of alloyed capping layers on the performance of InAs quantum dot solar cells AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ... Solar Energy Materials and Solar Cells 144, 128-135, 2016 | 21 | 2016 |
| Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves S Lazić, E Chernysheva, Ž Gačević, HP Van Der Meulen, E Calleja, ... AIP Advances 5 (9), 2015 | 19 | 2015 |
| Q-factor of (In, Ga) N containing III-nitride microcavity grown by multiple deposition techniques Ž Gačević, G Rossbach, R Butté, F Réveret, M Glauser, J Levrat, ... Journal of Applied Physics 114 (23), 2013 | 16 | 2013 |
| The effect of annealing treatment on the structural and optical properties of nanostructured CuxO films obtained by 3D printing ZG Vladyslav Yu. Yevdokymenko, O. Dobrozhan, R. Pshenychnyi, A. Opanasyuk ... Materials Science in Semiconductor Processing 161, 107472, 2023 | 15 | 2023 |
| Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters S Lazić, E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ... Gallium Nitride Materials and Devices X 9363, 96-103, 2015 | 15 | 2015 |
