追蹤
prashant majhi
prashant majhi
在 intel.com 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Forming a type I heterostructure in a group IV semiconductor
CO Chui, P Majhi, W Tsai, JT Kavalieros
US Patent 7,435,987, 2008
4742008
Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding
R Fastow, K Hasnat, P Majhi, O Jungroth
US Patent 10,651,153, 2020
2382020
Si tunnel transistors with a novel silicided source and 46mV/dec swing
K Jeon, WY Loh, P Patel, CY Kang, J Oh, A Bowonder, C Park, CS Park, ...
2010 Symposium on VLSI Technology, 121-122, 2010
2252010
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ...
Applied Physics Letters 92 (9), 2008
2082008
Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing
JC Ho, R Yerushalmi, G Smith, P Majhi, J Bennett, J Halim, VN Faifer, ...
Nano Letters 9 (2), 725-730, 2009
1802009
Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2
D Gu, SK Dey, P Majhi
Applied Physics Letters 89 (8), 2006
1512006
Work function engineering using lanthanum oxide interfacial layers
HN Alshareef, M Quevedo-Lopez, HC Wen, R Harris, P Kirsch, P Majhi, ...
Applied physics letters 89 (23), 2006
1332006
InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition
N Goel, P Majhi, CO Chui, W Tsai, D Choi, JS Harris
Applied physics letters 89 (16), 2006
1312006
Prospect of tunneling green transistor for 0.1 V CMOS
C Hu, P Patel, A Bowonder, K Jeon, SH Kim, WY Loh, CY Kang, J Oh, ...
2010 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2010
1222010
Nanoscale doping of InAs via sulfur monolayers
JC Ho, AC Ford, YL Chueh, PW Leu, O Ergen, K Takei, G Smith, P Majhi, ...
Applied Physics Letters 95 (7), 2009
1022009
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
842004
In0. 53Ga0. 47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness …
S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ...
Applied Physics Letters 92 (22), 2008
832008
Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/and HfO/sub 2
CH Lu, GMT Wong, MD Deal, W Tsai, P Majhi, CO Chui, MR Visokay, ...
IEEE electron device letters 26 (7), 445-447, 2005
832005
Improved electrical characteristics of Ge-on-Si field-effect transistors with controlled Ge epitaxial layer thickness on Si substrates
J Oh, P Majhi, H Lee, O Yoo, S Banerjee, CY Kang, JW Yang, R Harris, ...
IEEE electron device letters 28 (11), 1044-1046, 2007
772007
Transistors and methods of manufacture thereof
H Luan, P Majhi
US Patent 7,361,538, 2008
762008
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
752008
High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric
N Goel, P Majhi, W Tsai, M Warusawithana, DG Schlom, MB Santos, ...
Applied Physics Letters 91 (9), 2007
742007
Metal gate work function engineering using AlNx interfacial layers
HN Alshareef, HF Luan, K Choi, HR Harris, HC Wen, MA Quevedo-Lopez, ...
Applied Physics Letters 88 (11), 2006
722006
Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application
J Huang, D Heh, P Sivasubramani, PD Kirsch, G Bersuker, DC Gilmer, ...
2009 Symposium on VLSI Technology, 34-35, 2009
712009
Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme
HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ...
2007 IEEE Symposium on VLSI Technology, 154-155, 2007
702007
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