| Construction of thin strain-relaxed SiGe layers and method for fabricating the same PS Chen, SW Lee, KF Liao, LJ Chen, CW Liu US Patent 7,202,512, 2007 | 334 | 2007 |
| Strained silicon fin field effect transistor CW Liu, ST Chang, SH Hwang US Patent App. 10/785,515, 2004 | 276 | 2004 |
| Low-temperature fabrication and characterization of Ge-on-insulator structures CY Yu, CY Lee, CH Lin, CW Liu Applied Physics Letters 89 (10), 101913, 2006 | 262 | 2006 |
| Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same CW Liu, CY Yu, WY Chen, CH Lin US Patent App. 12/025,226, 2009 | 246 | 2009 |
| Metal-insulator-semiconductor photodetectors CH Lin, CW Liu Sensors 10 (10), 8797-8826, 2010 | 198 | 2010 |
| Physical thickness 1. x nm ferroelectric HfZrOx negative capacitance FETs MH Lee, ST Fan, CH Tang, PG Chen, YC Chou, HH Chen, JY Kuo, MJ Xie, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2016 | 197 | 2016 |
| Above-11%-efficiency organic–inorganic hybrid solar cells with omnidirectional harvesting characteristics by employing hierarchical photon-trapping structures WR Wei, ML Tsai, ST Ho, SH Tai, CR Ho, SH Tsai, CW Liu, RJ Chung, ... Nano letters 13 (8), 3658-3663, 2013 | 194 | 2013 |
| Mobility-enhancement technologies C Wee, S Maikop, CY Yu IEEE Circuits and Devices Magazine 21 (3), 21-36, 2005 | 154 | 2005 |
| Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100) A St. Amour, CW Liu, JC Sturm, Y Lacroix, MLW Thewalt Applied physics letters 67 (26), 3915-3917, 1995 | 148 | 1995 |
| Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3 WW Hsu, JY Chen, TH Cheng, SC Lu, WS Ho, YY Chen, YJ Chien, ... Applied Physics Letters 100 (2), 023508, 2012 | 141 | 2012 |
| Electron mobility enhancement in strained-germanium -channel metal-oxide-semiconductor field-effect transistors YJ Yang, WS Ho, CF Huang, ST Chang, CW Liu Applied Physics Letters 91 (10), 102103, 2007 | 135 | 2007 |
| Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics CW Liu, JC Sturm Journal of applied physics 82 (9), 4558-4565, 1997 | 129 | 1997 |
| Strain-enhanced photoluminescence from Ge direct transition TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ... Applied Physics Letters 96 (21), 211108, 2010 | 117 | 2010 |
| Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors LD Lanzerotti, AS Amour, CW Liu, JC Sturm, JK Watanabe, D Theodore IEEE Electron Device Letters 17 (7), 334-337, 1996 | 112 | 1996 |
| Realizing High-Efficiency Omnidirectional n-Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions HP Wang, TY Lin, CW Hsu, ML Tsai, CH Huang, WR Wei, MY Huang, ... ACS nano 7 (10), 9325-9335, 2013 | 107 | 2013 |
| Comprehensive study of the Raman shifts of strained silicon and germanium CY Peng, CF Huang, YC Fu, YH Yang, CY Lai, ST Chang, CW Liu Journal of Applied Physics 105 (8), 083537, 2009 | 106 | 2009 |
| Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes CW Liu, MH Lee, MJ Chen, IC Lin, CF Lin Applied Physics Letters 76 (12), 1516-1518, 2000 | 106 | 2000 |
| Quantum confinement effects in strained silicon‐germanium alloy quantum wells X Xiao, CW Liu, JC Sturm, LC Lenchyshyn, MLW Thewalt, RB Gregory, ... Applied physics letters 60 (17), 2135-2137, 1992 | 89 | 1992 |
| A novel photodetector using MOS tunneling structures CW Liu, WT Liu, MH Lee, WS Kuo, BC Hsu IEEE Electron Device Letters 21 (6), 307-309, 2000 | 86 | 2000 |
| Competitiveness between direct and indirect radiative transitions of Ge TH Cheng, CY Ko, CY Chen, KL Peng, GL Luo, CW Liu, HH Tseng Applied Physics Letters 96 (9), 091105, 2010 | 85 | 2010 |
