| Junctionless nanowire transistor (JNT): Properties and design guidelines JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ... Solid-State Electronics 65, 33-37, 2011 | 729 | 2011 |
| Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 2010 | 381 | 2010 |
| Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011 | 289 | 2011 |
| Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 2010 | 281 | 2010 |
| Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011 | 164 | 2011 |
| Gold complexes with thiosemicarbazones: reactions of bi-and tridentate thiosemicarbazones with dichloro [2-(dimethylaminomethyl) phenyl-C 1, N] gold (III),[Au (damp-C 1, N) Cl 2] U Abram, K Ortner, R Gust, K Sommer Journal of the Chemical Society, Dalton Transactions, 735-744, 2000 | 113* | 2000 |
| Mobility improvement in nanowire junctionless transistors by uniaxial strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ... Applied Physics Letters 97 (4), 2010 | 63 | 2010 |
| Improvement of carrier ballisticity in junctionless nanowire transistors N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (10), 2011 | 62 | 2011 |
| Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 60 | 2014 |
| Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 59 | 2010 |
| Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ... Science of Advanced Materials 3 (3), 477-482, 2011 | 53 | 2011 |
| Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi Applied Physics Letters 101 (21), 2012 | 51 | 2012 |
| Short-channel junctionless nanowire transistors CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ... Proc. SSDM, 1044-1045, 2010 | 50 | 2010 |
| A simulation comparison between junctionless and inversion-mode MuGFETs JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ... ECS Transactions 35 (5), 63, 2011 | 46 | 2011 |
| Random telegraph-signal noise in junctionless transistors AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (9), 2011 | 46 | 2011 |
| Bipolar effects in unipolar junctionless transistors MS Parihar, D Ghosh, GA Armstrong, R Yu, P Razavi, A Kranti Applied Physics Letters 101 (9), 2012 | 44 | 2012 |
| Investigation of high-performance sub-50 nm junctionless nanowire transistors R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ... Microelectronics Reliability 51 (7), 1166-1171, 2011 | 43 | 2011 |
| Introducing critical management studies: key dimensions L Taskin, H Willmott Gestion 25 (6), 27-38, 2000 | 43 | 2000 |
| Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013 | 41 | 2013 |
| Impact ionization induced dynamic floating body effect in junctionless transistors R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ... Solid-state electronics 90, 28-33, 2013 | 38 | 2013 |
Rodrigo T. DoriaCentro Universitário da FEI在 fei.edu.br 的電子郵件地址已通過驗證
