追蹤
Lawrence Boyu Young
Lawrence Boyu Young
在 ntu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ...
Journal of Crystal Growth 512, 223-229, 2019
202019
Analysis of border and interfacial traps in ALD-Y2O3 and-Al2O3 on GaAs via electrical responses-A comparative study
TW Chang, KY Lin, YH Lin, LB Young, J Kwo, M Hong
Microelectronic Engineering 178, 199-203, 2017
132017
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ...
Applied Physics Letters 118 (25), 252104, 2021
82021
Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition
YH Lin, KY Lin, WJ Hsueh, LB Young, TW Chang, JI Chyi, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 164-168, 2017
82017
Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ...
ACS nano 16 (2), 2369-2380, 2022
72022
Semiconductor device and manufacturing method thereof
Ming-Hwei Hong, Juei-Nai Kwo, Yen-Hsun Lin, Keng-Yung Lin, YANG Bo-Yu, WAN ...
US Patent 10,748,774, 2020
62020
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1018, 2022
52022
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001)
KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ...
Microelectronic engineering 178, 271-274, 2017
42017
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ...
Crystal Growth & Design 19 (4), 2030-2036, 2019
32019
In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs (0 0 1)-4× 6 surface
CP Cheng, WS Chen, YT Cheng, HW Wan, KY Lin, LB Young, CY Yang, ...
Journal of Physics D: Applied Physics 51 (40), 405102, 2018
32018
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A and (001) using atomic layer deposition
CK Cheng, LB Young, KY Lin, YH Lin, HW Wan, GJ Lu, MT Chang, ...
Microelectronic Engineering 178, 125-127, 2017
32017
Demonstration of large field effect in topological insulator films via a high-κ back gate
CY Wang, HY Lin, SR Yang, KHM Chen, YH Lin, KH Chen, LB Young, ...
Applied Physics Letters 108 (20), 202403, 2016
32016
Material having single crystal perovskite, device including the same, and manufacturing method thereof
YANG Bo-Yu, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, WAN ...
US Patent 10,755,924, 2020
22020
Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability
HW Wan, YJ Hong, LB Young, M Hong, J Kwo
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
22019
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A
LB Young, CK Cheng, GJ Lu, KY Lin, YH Lin, HW Wan, MY Li, RF Cai, ...
Journal of Vacuum Science & Technology A 35 (1), 2017
22017
Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation
WS Chen, KY Lin, YHG Lin, HW Wan, LB Young, CP Cheng, TW Pi, J Kwo, ...
ACS Applied Electronic Materials 5 (7), 3809-3816, 2023
12023
Enormous Berry-Curvature-Driven Anomalous Hall Effect in Topological Insulator (Bi, Sb) 2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ...
arXiv preprint arXiv:2103.16487, 2021
12021
Microstrip resonators with internal quality factors over one million made from MBE-Al films capped with an in-situ deposited oxide layer
KH Lai, YHG Lin, L Young, WS Chen, CK Cheng, WJ Yan, YH Lin, J Kwo, ...
Bulletin of the American Physical Society, 2024
2024
Attainment of SS< 10 mV/dec at 4 K in in-situ passivated planar bulk GaAs MOSFETs: alternative cryogenic electronics
L Young, J Liu, HW Wan, YHG Lin, YT Cheng, BY Chen, KM Chen, ...
Bulletin of the American Physical Society, 2024
2024
Electrically sign-reversible topological Hall effect in a top-gated topological insulator grown on europium iron garnet
JF Wong, KHM Chen, JM Chia, ZP Huang, SX Wang, PT Chen, LB Young, ...
Physical Review B 109 (2), 024432, 2024
2024
系統目前無法執行作業,請稍後再試。
文章 1–20