| Band-to-band tunneling in carbon nanotube field-effect transistors J Appenzeller, YM Lin, J Knoch, P Avouris Physical review letters 93 (19), 196805, 2004 | 1118 | 2004 |
| The role of metal− nanotube contact in the performance of carbon nanotube field-effect transistors Z Chen, J Appenzeller, J Knoch, Y Lin, P Avouris Nano letters 5 (7), 1497-1502, 2005 | 890 | 2005 |
| Field-modulated carrier transport in carbon nanotube transistors J Appenzeller, J Knoch, V Derycke, R Martel, S Wind, P Avouris Physical Review Letters 89 (12), 126801, 2002 | 636 | 2002 |
| High-performance carbon nanotube field-effect transistor with tunable polarities YM Lin, J Appenzeller, J Knoch, P Avouris IEEE transactions on nanotechnology 4 (5), 481-489, 2005 | 620 | 2005 |
| Toward nanowire electronics J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess IEEE Transactions on electron devices 55 (11), 2827-2845, 2008 | 476 | 2008 |
| Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design J Appenzeller, YM Lin, J Knoch, Z Chen, P Avouris IEEE Transactions on Electron Devices 52 (12), 2568-2576, 2005 | 448 | 2005 |
| Donor deactivation in silicon nanostructures MT Björk, H Schmid, J Knoch, H Riel, W Riess Nature nanotechnology 4 (2), 103-107, 2009 | 397 | 2009 |
| Tunneling versus thermionic emission in one-dimensional semiconductors J Appenzeller, M Radosavljević, J Knoch, P Avouris Physical review letters 92 (4), 048301, 2004 | 387 | 2004 |
| Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices J Knoch, S Mantl, J Appenzeller Solid-State Electronics 51 (4), 572-578, 2007 | 363 | 2007 |
| Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs M Zhang, J Knoch, QT Zhao, U Breuer, S Mantl Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 311 | 2005 |
| Modeling of high-performance p-type III–V heterojunction tunnel FETs J Knoch, J Appenzeller IEEE Electron Device Letters 31 (4), 305-307, 2010 | 268 | 2010 |
| Tunneling phenomena in carbon nanotube field‐effect transistors J Knoch, J Appenzeller physica status solidi (a) 205 (4), 679-694, 2008 | 264 | 2008 |
| Silicon nanowire tunneling field-effect transistors MT Björk, J Knoch, H Schmid, H Riel, W Riess Applied Physics Letters 92 (19), 2008 | 243 | 2008 |
| Carbon nanotube electronics J Appenzeller, J Knoch, R Martel, V Derycke, SJ Wind, P Avouris IEEE transactions on nanotechnology 1 (4), 184-189, 2002 | 218 | 2002 |
| Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes YM Lin, J Appenzeller, J Knoch, Z Chen, P Avouris Nano letters 6 (5), 930-936, 2006 | 167 | 2006 |
| High performance of potassium -doped carbon nanotube field-effect transistors M Radosavljević, J Appenzeller, P Avouris, J Knoch Applied Physics Letters 84 (18), 3693-3695, 2004 | 162 | 2004 |
| Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si (111) using silane H Schmid, MT Björk, J Knoch, H Riel, W Riess, P Rice, T Topuria Journal of Applied Physics 103 (2), 2008 | 151 | 2008 |
| Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors C Sandow, J Knoch, C Urban, QT Zhao, S Mantl Solid-State Electronics 53 (10), 1126-1129, 2009 | 149 | 2009 |
| Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors J Appenzeller, J Knoch, M Radosavljević, P Avouris Physical Review Letters 92 (22), 226802, 2004 | 146 | 2004 |
| A novel concept for field-effect transistors-the tunneling carbon nanotube FET J Knoch, J Appenzeller 63rd Device Research Conference Digest, 2005. DRC'05. 1, 153-156, 2005 | 140 | 2005 |
