| Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014 | 119 | 2014 |
| Bandgap bowing in BGaN thin films A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ... Applied Physics Letters 93 (8), 2008 | 71 | 2008 |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ... Journal of crystal growth 370, 57-62, 2013 | 68 | 2013 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 66 | 2012 |
| Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013 | 60 | 2013 |
| BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015 | 48 | 2015 |
| Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011 | 47 | 2011 |
| AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015 | 44 | 2015 |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ... Journal of Crystal Growth 315 (1), 160-163, 2011 | 43 | 2011 |
| Deep structural analysis of novel BGaN material layers grown by MOVPE S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ... Journal of crystal growth 315 (1), 288-291, 2011 | 42 | 2011 |
| Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ... Journal of Crystal Growth 310 (5), 944-947, 2008 | 40 | 2008 |
| Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors V Ravindran, M Boucherit, A Soltani, S Gautier, T Moudakir, J Dickerson, ... Applied Physics Letters 100 (24), 2012 | 35 | 2012 |
| Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ... Nanotechnology 23 (45), 455707, 2012 | 33 | 2012 |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ... physica status solidi (a) 209 (1), 25-28, 2012 | 32 | 2012 |
| Characteristics of the surface microstructures in thick InGaN layers on GaN Y El Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ... Optical Materials Express 3 (8), 1111-1118, 2013 | 29 | 2013 |
| Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy T Baghdadli, SOS Hamady, S Gautier, T Moudakir, B Benyoucef, ... physica status solidi c 6 (S2 2), S1029-S1032, 2009 | 29 | 2009 |
| Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ... Materials Science and Engineering: B 178 (2), 142-148, 2013 | 28 | 2013 |
| Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer … S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ... Journal of crystal growth 370, 63-67, 2013 | 23 | 2013 |
| CuIn1− x GaxS2 wide gap absorbers grown by close-spaced vapor transport T Moudakir, K Djessas, G Masse Journal of Crystal Growth 270 (3-4), 517-526, 2004 | 23 | 2004 |
| Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm T Moudakir, F Genty, M Kunzer, P Börner, T Passow, S Suresh, ... IEEE Photonics Journal 5 (6), 8400709-8400709, 2013 | 20 | 2013 |
