追蹤
T. D. Lin
T. D. Lin
在 mx.nthu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Energy-band parameters of atomic-layer-deposition AlO/ InGaAs heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89, 012903, 2006
2402006
Interfacial self-cleaning in atomic layer deposition of HfO gate dielectric on InGaAs
CH Chang, YK Chiou, YC Chang, KY Lee, TD Lin, TB Wu, M Hong, J Kwo
Applied physics letters 89, 242911, 2006
1782006
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3/ Ga2O3 (Gd2O3) as gate dielectrics
TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ...
Applied Physics Letters 93 (3), 033516, 2008
1732008
Atomic-layer-deposited HfO on InGaAs: Passivation and energy-band parameters
YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Lay, ...
Applied Physics Letters 92, 072901, 2008
1382008
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs
ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong
Applied Physics Letters 94 (5), 052106-052106-3, 2009
872009
Realization of high-quality HfO< inf> 2</inf> on In< inf> 0.53</inf> Ga< inf> 0.47</inf> As by in-situ atomic-layer-deposition
TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong
Applied Physics Letters 100 (17), 172110-172110-4, 2012
65*2012
Self-aligned inversion-channel In< sub> 0.75</sub> Ga< sub> 0.25</sub> As metal–oxide–semiconductor field-effect-transistors using UHV-Al< sub> 2</sub> O< sub> 3</sub>/Ga< sub …
TD Lin, HC Chiu, P Chang, YH Chang, YD Wu, M Hong, J Kwo
Solid-State Electronics 54 (9), 919-924, 2010
47*2010
InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
M Hong, J Kwo, TD Lin, ML Huang
MRS bulletin 34 (07), 514-521, 2009
402009
GaO (GdO) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong
Applied Physics Letters 94, 202108, 2009
352009
Effective passivation of In< inf> 0.2</inf> Ga< inf> 0.8</inf> As by HfO< inf> 2</inf> surpassing Al< inf> 2</inf> O< inf> 3</inf> via in-situ atomic layer deposition
YH Chang, CA Lin, YT Liu, TH Chiang, HY Lin, ML Huang, TD Lin, TW Pi, ...
Applied Physics Letters 101 (17), 172104-172104-5, 2012
33*2012
Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-< i> κ</i> dielectrics on Ge without interfacial layers
LK Chu, RL Chu, TD Lin, WC Lee, CA Lin, ML Huang, YJ Lee, J Kwo, ...
Solid-State Electronics 54 (9), 965-971, 2010
332010
GaO (GdO)/ SiN dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
JF Zheng, W Tsai, TD Lin, YJ Lee, CP Chen, M Hong, J Kwo, S Cui, ...
Applied Physics Letters 91, 223502, 2007
33*2007
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
TD Lin, WH Chang, RL Chu, YC Chang, YH Chang, MY Lee, PF Hong, ...
Applied Physics Letters 103 (25), 253509, 2013
312013
Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation
CA Lin, HC Chiu, TH Chiang, TD Lin, YH Chang, WH Chang, YC Chang, ...
Applied Physics Letters 98, 062108, 2011
282011
Molecular beam epitaxy grown Ga2O3 (Gd2O3) high k dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
CH Lee, TD Lin, LT Tung, ML Huang, M Hong, J Kwo
Journal of vacuum science & technology. B, Microelectronics and nanometer …, 2008
242008
Self-aligned inversion n-channel In< sub> 0.2</sub> Ga< sub> 0.8</sub> As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga< sub> 2</sub> O< sub> 3 …
CP Chen, TD Lin, YJ Lee, YC Chang, M Hong, J Kwo
Solid-State Electronics 52 (10), 1615-1618, 2008
22*2008
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
TW Pi, HY Lin, TH Chiang, YT Liu, YC Chang, TD Lin, GK Wertheim, ...
Applied Surface Science 284, 601-610, 2013
212013
Engineering of threshold voltages in molecular beam epitaxy-grown AlO/ GaO (GdO)/ InGaAs
YD Wu, TD Lin, TH Chiang, YC Chang, HC Chiu, YJ Lee, M Hong, CA Lin, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010
20*2010
Molecular beam epitaxy-grown Al< sub> 2</sub> O< sub> 3</sub>/HfO< sub> 2</sub> high-κ dielectrics for germanium
WC Lee, BH Chin, LK Chu, TD Lin, YJ Lee, LT Tung, CH Lee, M Hong, ...
Journal of Crystal Growth 311 (7), 2187-2190, 2009
19*2009
MBE grown high-quality Gd< sub> 2</sub> O< sub> 3</sub>/Si (111) hetero-structure
TD Lin, MC Hang, CH Hsu, J Kwo, M Hong
Journal of Crystal Growth 301, 386-389, 2007
19*2007
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