| Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing SW Huang, JG Hwu IEEE Transactions on Electron Devices 50 (7), 1658-1664, 2003 | 53 | 2003 |
| Enhancement of silicon oxidation rate due to tensile mechanical stress JY Yen, JG Hwu Applied Physics Letters 76 (14), 1834-1835, 2000 | 52 | 2000 |
| An on-chip temperature sensor by utilizing a MOS tunneling diode YH Shih, JG Hwu IEEE Electron Device Letters 22 (6), 299-301, 2001 | 50 | 2001 |
| Stress effect on the kinetics of silicon thermal oxidation JY Yen, JG Hwu Journal of Applied Physics 89 (5), 3027-3032, 2001 | 49 | 2001 |
| High-k Al/sub 2/O/sub 3/gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing CS Kuo, JF Hsu, SW Huang, LS Lee, MJ Tsai, JG Hwu IEEE Transactions on Electron Devices 51 (6), 854-858, 2004 | 44 | 2004 |
| Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides JY Cheng, CT Huang, JG Hwu Journal of Applied Physics 106 (7), 2009 | 41 | 2009 |
| High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection YH Shih, SR Lin, TM Wang, JG Hwu IEEE Transactions on Electron Devices 51 (9), 1514-1521, 2004 | 40 | 2004 |
| Subthreshold swing reduction by double exponential control mechanism in an MOS gated-MIS tunnel transistor CS Liao, JG Hwu IEEE Transactions on Electron Devices 62 (6), 2061-2065, 2015 | 37 | 2015 |
| Photosensing by edge Schottky barrier height modulation induced by lateral diffusion current in MOS (p) photodiode YK Lin, JG Hwu IEEE Transactions on Electron Devices 61 (9), 3217-3222, 2014 | 36 | 2014 |
| Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation SW Huang, JG Hwu IEEE transactions on electron devices 51 (11), 1877-1882, 2004 | 36 | 2004 |
| Characterization of Edge Fringing Effect on the–Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High-Dielectric JY Cheng, JG Hwu IEEE transactions on electron devices 59 (3), 565-572, 2011 | 29 | 2011 |
| Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high-k material JY Cheng, HT Lu, JG Hwu Applied Physics Letters 96 (23), 2010 | 29 | 2010 |
| Clockwise C‐V hysteresis phenomena of metal–tantalum‐oxide–silicon‐oxide–silicon (p) capacitors due to leakage current through tantalum oxide JG Hwu, MJ Jeng, WS Wang, YK Tu Journal of applied physics 62 (10), 4277-4283, 1987 | 28 | 1987 |
| Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2 TY Chen, JG Hwu Applied Physics Letters 101 (7), 2012 | 27 | 2012 |
| Ultralow leakage characteristics of ultrathin gate oxides (/spl sim/3 nm) prepared by anodization followed by high-temperature annealing CC Ting, YH Shih, JG Hwu IEEE Transactions on Electron Devices 49 (1), 179-181, 2002 | 27 | 2002 |
| Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification MJ Jeng, JG Hwu IEEE Electron Device Letters 17 (12), 575-577, 1996 | 27 | 1996 |
| A circuit design for the improvement of radiation hardness in CMOS digital circuits CC Chen, SC Liu, CC Hsiao, JG Hwu IEEE transactions on nuclear science 39 (2), 272-277, 1992 | 27 | 1992 |
| Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/gate dielectrics SW Huang, JG Hwu IEEE Transactions on electron devices 53 (7), 1608-1614, 2006 | 24 | 2006 |
| Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments JG Hwu, SL Fu Solid-state electronics 32 (8), 615-621, 1989 | 24 | 1989 |
| Enhancement of transient two-states characteristics in metal-insulator-semiconductor structure by thinning metal thickness KH Tseng, CS Liao, JG Hwu IEEE Transactions on Nanotechnology 16 (6), 1011-1015, 2017 | 23 | 2017 |
