| Inkjet printing—process and its applications M Singh, HM Haverinen, P Dhagat, GE Jabbour Advanced materials 22 (6), 673-685, 2010 | 2844 | 2010 |
| Polarization Effects in Semiconductors-From Ab InitioTheory to Device Applications-Chapter II: Lateral and Vertical Charge Transport in Polar Nitride Heterostructures … YR Wu, M Singh, J Singh Springer, 2007 | 1092* | 2007 |
| Extrafluorescent electroluminescence in organic light-emitting devices M Segal, M Singh, K Rivoire, S Difley, T Van Voorhis, MA Baldo Nature materials 6 (5), 374-378, 2007 | 228 | 2007 |
| Recent developments and directions in printed nanomaterials HW Choi, T Zhou, M Singh, GE Jabbour Nanoscale 7 (8), 3338-3355, 2015 | 155 | 2015 |
| Plasmonic excitation of organic double heterostructure solar cells JK Mapel, M Singh, MA Baldo, K Celebi Applied physics letters 90, 121102, 2007 | 104 | 2007 |
| Electroluminescence from printed stellate polyhedral oligomeric silsesquioxanes M Singh, HS Chae, JD Froehlich, T Kondou, S Li, A Mochizuki, ... Soft matter 5 (16), 3002-3005, 2009 | 100 | 2009 |
| Surface plasmon polariton mediated energy transfer in organic photovoltaic devices TD Heidel, JK Mapel, M Singh, K Celebi, MA Baldo Applied Physics Letters 91, 093506, 2007 | 90 | 2007 |
| Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length YR Wu, M Singh, J Singh IEEE Transactions on Electron Devices 53 (4), 588-593, 2006 | 78 | 2006 |
| Gate leakage suppression and contact engineering in nitride heterostructures YR Wu, M Singh, J Singh Journal of applied physics 94, 5826, 2003 | 62 | 2003 |
| Design of high electron mobility devices with composite nitride channels M Singh, J Singh Journal of applied physics 94, 2498, 2003 | 62 | 2003 |
| Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge M Singh, Y Zhang, J Singh, U Mishra Applied Physics Letters 77, 1867, 2000 | 57 | 2000 |
| Sources of transconductance collapse in III-V nitrides-consequences of velocity-field relations and source/gate design YR Wu, M Singh, J Singh IEEE Transactions on Electron Devices 52 (6), 1048-1054, 2005 | 44 | 2005 |
| Velocity overshoot effects and scaling issues in III-V nitrides M Singh, YR Wu, J Singh IEEE Transactions on Electron Devices 52 (3), 311-316, 2005 | 38 | 2005 |
| Printable displays and light sources for sensor applications: a review RS Deol, HW Choi, M Singh, GE Jabbour IEEE Sensors Journal 15 (6), 3186-3195, 2014 | 28 | 2014 |
| Photovoltaic cell M Baldo, J Mapel, M Singh US Patent App. 11/290,625, 2007 | 27 | 2007 |
| Examination of LiNbO 3/nitride heterostructures M Singh, YR Wu, J Singh Solid-State Electronics 47 (12), 2155-2159, 2003 | 26 | 2003 |
| Current–voltage characteristics of polar heterostructure junctions M Singh, J Singh, U Mishra Journal of applied physics 91, 2989, 2002 | 25 | 2002 |
| Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics D Mao, I Mejia, AL Salas-Villasenor, M Singh, H Stiegler, BE Gnade, ... Organic Electronics 14 (2), 505-510, 2013 | 22 | 2013 |
| The Role of the Carrier Mass in Semiconductor Quantum Dots M Singh, V Ranjan, VA Singh International Journal of Modern Physics B 14 (17), 1753-1766, 2000 | 22 | 2000 |
| A lead-free flexible energy harvesting device RS Deol, N Batra, P Rai, HS Devi, B Mitra, M Singh Microsystem Technologies 28 (9), 2061-2070, 2022 | 7 | 2022 |
ghassan jabbourCanada Research Chair Tier 1, Electrical Engineering, University of Ottawa在 uottawa.ca 的電子郵件地址已通過驗證
