追蹤
Tien Sheng Chao
Tien Sheng Chao
National Yang Ming Chiao Tung University
在 nycu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
3D 65nm CMOS with 320° C microwave dopant activation
YJ Lee, YL Lu, FK Hsueh, KC Huang, CC Wan, TY Cheng, MH Han, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2352009
Gate-all-around junctionless transistors with heavily doped polysilicon nanowire channels
CJ Su, TI Tsai, YL Liou, ZM Lin, HC Lin, TS Chao
IEEE Electron Device Letters 32 (4), 521-523, 2011
2232011
Nanometer-scale conversion of to
FSS Chien, JW Chang, SW Lin, YC Chou, TT Chen, S Gwo, TS Chao, ...
Applied Physics Letters 76 (3), 360-362, 2000
1252000
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
Y Li, SM Sze, TS Chao
Engineering with Computers 18, 124-137, 2002
1202002
Local electric-field-induced oxidation of titanium nitride films
S Gwo, CL Yeh, PF Chen, YC Chou, TT Chen, TS Chao, SF Hu, ...
Applied physics letters 74 (8), 1090-1092, 1999
1011999
Improving radiation hardness of EEPROM/flash cell by N 2 O annealing
T Huang, FC Jong, TS Chao, HC Lin, LY Leu, K Young, CH Lin, KY Chin
IEEE Electron Device Letters 19 (7), 256-258, 1998
881998
Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications
FSS Chien, YC Chou, TT Chen, WF Hsieh, TS Chao, S Gwo
Journal of Applied Physics 89 (4), 2465-2472, 2001
822001
High-k cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
TM Pan, TF Lei, TS Chao
Applied Physics Letters 78 (10), 1439-1441, 2001
772001
Low-temperature microwave annealing processes for future IC fabrication—A review
YJ Lee, TC Cho, SS Chuang, FK Hsueh, YL Lu, PJ Sung, HC Chen, ...
IEEE Transactions on electron devices 61 (3), 651-665, 2014
732014
High Quality Ultrathin CoTiO3 High‐k Gate Dielectrics
TM Pan, TF Lei, TS Chao, KL Chang, KC Hsieh
Electrochemical and Solid-State Letters 3 (9), 433, 2000
732000
Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
TH Hou, TF Lei, TS Chao
IEEE Electron Device Letters 20 (11), 572-573, 1999
691999
Fabrication and Characterization of High‐k Dielectric Nickel Titanate Thin Films Using a Modified Sol–Gel Method
SH Chuang, ML Hsieh, SC Wu, HC Lin, TS Chao, TH Hou
Journal of the American ceramic society 94 (1), 250-254, 2011
542011
Process for suppressing boron penetration in BF2+-implanted P+-poly-Si gate using inductively-coupled nitrogen plasma
TS Chao, CH Chu
US Patent 5,629,221, 1997
541997
Reliability Mechanisms of LTPS-TFT WithGate Dielectric: PBTI, NBTI, and Hot-Carrier Stress
MW Ma, CY Chen, WC Wu, CJ Su, KH Kao, TS Chao, TF Lei
IEEE transactions on electron devices 55 (5), 1153-1160, 2008
532008
Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory
WC Wu, TS Chao, WC Peng, WL Yang, JC Wang, JH Chen, CS Lai, ...
IEEE Electron Device Letters 28 (3), 214-216, 2007
502007
A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing
YJ Lee, TC Cho, KH Kao, PJ Sung, FK Hsueh, PC Huang, CT Wu, SH Hsu, ...
2014 IEEE international Electron devices meeting, 32.7. 1-32.7. 4, 2014
482014
Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
CS Lai, WC Wu, JC Wang
Applied Physics Letters 86 (22), 2005
482005
A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs
T Wang, LP Chiang, NK Zous, CF Hsu, LY Huang, TS Chao
IEEE Transactions on Electron Devices 46 (9), 1877-1882, 1999
481999
Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment
CS Lai, WC Wu, TS Chao, JH Chen, JC Wang, LL Tay, N Rowell
Applied physics letters 89 (7), 2006
472006
First demonstration of CMOS inverter and 6T-SRAM based on GAA CFETs structure for 3D-IC applications
SW Chang, PJ Sung, TY Chu, DD Lu, CJ Wang, NC Lin, CJ Su, SH Lo, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.7. 1-11.7. 4, 2019
452019
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