追蹤
Hsien-Wen Wan
Hsien-Wen Wan
在 ntu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ...
Journal of Crystal Growth 512, 223-229, 2019
202019
Perfecting the Al2O3/In0. 53Ga0. 47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer …
M Hong, HW Wan, KY Lin, YC Chang, MH Chen, YH Lin, TD Lin, TW Pi, ...
Applied Physics Letters 111 (12), 2017
202017
Surface electronic structure of epi Germanium (001)-2× 1
YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ...
Applied Physics Express 10 (7), 075701, 2017
172017
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs (001) interface
HW Wan, YH Lin, KY Lin, TW Chang, RF Cai, J Kwo, M Hong
Microelectronic Engineering 178, 154-157, 2017
112017
Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron …
CP Cheng, WS Chen, YT Cheng, HW Wan, CY Yang, TW Pi, J Kwo, ...
ACS omega 3 (2), 2111-2118, 2018
102018
Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi
Applied Physics Express 13 (8), 085504, 2020
92020
In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures
YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ...
Applied Physics Letters 118 (25), 2021
82021
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3–In comparison with atomic layer deposited Al2O3
HW Wan, KY Lin, CK Cheng, YK Su, WC Lee, CH Hsu, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 179-182, 2017
82017
Atomic nature of the Schottky barrier height formation of the Ag/GaAs (001)-2× 4 interface: An in-situ synchrotron radiation photoemission study
CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ...
Applied Surface Science 393, 294-298, 2017
82017
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ...
ACS Applied Electronic Materials 3 (5), 2164-2169, 2021
72021
Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study
YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi
Applied Physics Express 13 (9), 095503, 2020
62020
Semiconductor device and manufacturing method thereof
MH Hong, JN Kwo, YH Lin, KY Lin, Y Bo-Yu, WAN Hsien-Wen
US Patent 10,748,774, 2020
62020
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1018, 2022
52022
Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission
YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi
Nanomaterials 9 (4), 554, 2019
52019
Atom-to-atom interaction of O2 with epi Ge (001)-2× 1 in elucidating GeOx formation
YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi
Applied Physics Express 11 (11), 115701, 2018
52018
Exciton Localization of High-Quality ZnO/MgxZn1–xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer
WR Liu, WL Huang, YC Wu, LH Lai, CH Hsu, WF Hsieh, TH Chiang, ...
ACS Applied Nano Materials 1 (8), 3829-3836, 2018
52018
BTI Characterization of MBE Si-capped Ge gate stack and defect reduction via forming gas annealing
HW Wan, YJ Hong, YT Cheng, M Hong
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
42019
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001)
KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ...
Microelectronic engineering 178, 271-274, 2017
42017
In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability
TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1074, 2022
32022
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ...
Crystal Growth & Design 19 (4), 2030-2036, 2019
32019
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