追蹤
Yi-Ting Cheng
Yi-Ting Cheng
國立台灣大學
在 ntu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ...
Journal of Crystal Growth 512, 223-229, 2019
202019
Surface electronic structure of epi Germanium (001)-2× 1
YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ...
Applied Physics Express 10 (7), 075701, 2017
172017
Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron …
CP Cheng, WS Chen, YT Cheng, HW Wan, CY Yang, TW Pi, J Kwo, ...
ACS omega 3 (2), 2111-2118, 2018
102018
Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi
Applied Physics Express 13 (8), 085504, 2020
92020
In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures
YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ...
Applied Physics Letters 118 (25), 2021
82021
Atomic nature of the Schottky barrier height formation of the Ag/GaAs (001)-2× 4 interface: An in-situ synchrotron radiation photoemission study
CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ...
Applied Surface Science 393, 294-298, 2017
82017
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ...
ACS Applied Electronic Materials 3 (5), 2164-2169, 2021
72021
Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study
YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi
Applied Physics Express 13 (9), 095503, 2020
62020
Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission
YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi
Nanomaterials 9 (4), 554, 2019
52019
Atom-to-atom interaction of O2 with epi Ge (001)-2× 1 in elucidating GeOx formation
YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi
Applied Physics Express 11 (11), 115701, 2018
52018
BTI Characterization of MBE Si-capped Ge gate stack and defect reduction via forming gas annealing
HW Wan, YJ Hong, YT Cheng, M Hong
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
42019
In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability
TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1074, 2022
32022
In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs (0 0 1)-4× 6 surface
CP Cheng, WS Chen, YT Cheng, HW Wan, KY Lin, LB Young, CY Yang, ...
Journal of Physics D: Applied Physics 51 (40), 405102, 2018
32018
Relevance of GaAs (001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
TW Pi, WS Chen, YH Lin, YT Cheng, GJ Wei, KY Lin, CP Cheng, J Kwo, ...
Applied Physics Letters 110 (5), 2017
32017
A Synchrotron Radiation Photoemission Study of SiGe (001)-2× 1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
YT Cheng, HW Wan, J Kwo, M Hong, TW Pi
Nanomaterials 12 (8), 1309, 2022
22022
Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge
YT Cheng, HW Wan, TY Chu, TW Pi, J Kwo, M Hong
ACS Applied Electronic Materials 3 (10), 4484-4489, 2021
22021
High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability
HW Wan, YT Cheng, CK Cheng, YJ Hong, TY Chu, MT Chang, CH Hsu, ...
ACS Applied Electronic Materials 4 (6), 2641-2647, 2022
12022
Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
WH Chang, HW Wan, YT Cheng, YHG Lin, T Irisawa, H Ishii, J Kwo, ...
Japanese Journal of Applied Physics 61 (SC), SC1024, 2022
12022
Semiconductor device and manufacturing method thereof
WAN Hsien-Wen, YT Cheng, MH Hong, JN Kwo, Y Bo-Yu, H Yu-Jie
US Patent 11,245,023, 2022
12022
Dark Showers with the Z Portal
HC Cheng
Bulletin of the American Physical Society, 2024
2024
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