追蹤
Woojin Park
Woojin Park
Gwangju Institute of Science and Technology
在 kaust.edu.sa 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
The application of graphene as electrodes in electrical and optical devices
G Jo, M Choe, S Lee, W Park, YH Kahng, T Lee
Nanotechnology 23 (11), 112001, 2012
4942012
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes
J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ...
Small 9 (19), 3295-3300, 2013
3612013
Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes
G Jo, M Choe, CY Cho, JH Kim, W Park, S Lee, WK Hong, TW Kim, ...
Nanotechnology 21 (17), 175201, 2010
3602010
Efficient bulk-heterojunction photovoltaic cells with transparent multi-layer graphene electrodes
M Choe, BH Lee, G Jo, J Park, W Park, S Lee, WK Hong, MJ Seong, ...
Organic Electronics 11 (11), 1864-1869, 2010
1462010
Enhanced charge injection in pentacene field-effect transistors with graphene electrodes
S Lee, G Jo, SJ Kang, G Wang, M Choe, W Park, DY Kim, YH Kahng, ...
Advanced Materials(FRG) 23 (1), 100-105, 2011
1362011
Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure
G Jo, SI Na, SH Oh, S Lee, TS Kim, G Wang, M Choe, W Park, J Yoon, ...
Applied Physics Letters 97 (21), 2010
1212010
Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation
WK Hong, G Jo, JI Sohn, W Park, M Choe, G Wang, YH Kahng, ...
Acs Nano 4 (2), 811-818, 2010
712010
Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps
W Park, G Jo, WK Hong, J Yoon, M Choe, S Lee, Y Ji, G Kim, YH Kahng, ...
Nanotechnology 22 (20), 205204, 2011
622011
Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
M Choe, CY Cho, JP Shim, W Park, SK Lim, WK Hong, B Hun Lee, ...
Applied Physics Letters 101 (3), 2012
572012
Thermal stability of multilayer graphene films synthesized by chemical vapor deposition and stained by metallic impurities
YH Kahng, S Lee, W Park, G Jo, M Choe, JH Lee, H Yu, T Lee, K Lee
Nanotechnology 23 (7), 075702, 2012
552012
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack
W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
522013
Diameter-Engineered SnO2 Nanowires over Contact-Printed Gold Nanodots Using Size-Controlled Carbon Nanopost Array Stamps
SH Lee, G Jo, W Park, S Lee, YS Kim, BK Cho, T Lee, WB Kim
ACS nano 4 (4), 1829-1836, 2010
482010
Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons
J Yoon, WK Hong, M Jo, G Jo, M Choe, W Park, JI Sohn, S Nedic, ...
Acs Nano 5 (1), 558-564, 2011
472011
Logic inverters composed of controlled depletion-mode and enhancement-mode ZnO nanowire transistors
G Jo, WK Hong, J Maeng, M Choe, W Park, T Lee
Applied Physics Letters 94 (17), 2009
462009
Ferroelectric polymer-gated graphene memory with high speed conductivity modulation
HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ...
Nanotechnology 24 (17), 175202, 2013
412013
Transient drain current characteristics of ZnO nanowire field effect transistors
J Maeng, W Park, M Choe, G Jo, YH Kahng, T Lee
Applied Physics Letters 95 (12), 2009
402009
Complementary Unipolar WS2 Field‐Effect Transistors Using Fermi‐Level Depinning Layers
W Park, Y Kim, U Jung, JH Yang, C Cho, YJ Kim, SMN Hasan, HG Kim, ...
Advanced Electronic Materials 2 (2), 1500278, 2016
372016
A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks
YH Kahng, S Lee, M Choe, G Jo, W Park, J Yoon, WK Hong, CH Cho, ...
Nanotechnology 22 (4), 045706, 2010
352010
Contact resistance reduction using Fermi level de-pinning layer for MoS2FETs
W Park, Y Kim, SK Lee, U Jung, JH Yang, C Cho, YJ Kim, SK Lim, ...
2014 IEEE International Electron Devices Meeting, 5.1. 1-5.1. 4, 2014
342014
Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013)
J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ...
Small 9 (19), 3185-3185, 2013
342013
系統目前無法執行作業,請稍後再試。
文章 1–20