追蹤
Christopher Smyth
標題
引用次數
引用次數
年份
Realizing large-scale, electronic-grade two-dimensional semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
2172018
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016
1562016
MoS2–Titanium Contact Interface Reactions
S McDonnell, C Smyth, CL Hinkle, RM Wallace
ACS applied materials & interfaces 8 (12), 8289-8294, 2016
1522016
Contact Engineering High-Performance n-Type MoTe2 Transistors
MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin, S Chatterjee, YC Tsai, ...
Nano letters 19 (9), 6352-6362, 2019
1142019
High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth
G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ...
Advanced Materials 30 (36), 1803109, 2018
1112018
Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation
RC Longo, R Addou, KC Santosh, JY Noh, CM Smyth, D Barrera, ...
2D Materials 4 (2), 025050, 2017
1112017
Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3
LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ...
The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017
1012017
WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions
CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace
2D Materials 4 (2), 025084, 2017
952017
ACS nano
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tomanek, PD Ye
ACS Nano 8 (1031), 2014
702014
W Te2 thin films grown by beam-interrupted molecular beam epitaxy
LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ...
2D Materials 4 (2), 025044, 2017
582017
One dimensional metallic edges in atomically thin WSe2 induced by air exposure
R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, SM Eichfeld, S Fölsch, ...
2D Materials 5 (2), 025017, 2018
572018
Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ...
ACS Applied Electronic Materials 1 (2), 210-219, 2019
512019
Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ...
ACS Applied Nano Materials 2 (1), 75-88, 2018
382018
Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2
A Khosravi, R Addou, CM Smyth, R Yue, CR Cormier, J Kim, CL Hinkle, ...
APL Materials 6 (2), 2018
312018
In situ exfoliated 2D molybdenum disulfide analyzed by XPS
X Wang, CR Cormier, A Khosravi, CM Smyth, JR Shallenberger, R Addou, ...
Surface Science Spectra 27 (1), 2020
242020
Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
CM Smyth, R Addou, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 124 (27), 14550-14563, 2020
222020
Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
CM Smyth, R Addou, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 123 (39), 23919-23930, 2019
222019
WSe (2− x) Tex alloys grown by molecular beam epitaxy
AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
222019
Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation
YC Lin, BM Bersch, R Addou, K Xu, Q Wang, CM Smyth, B Jariwala, ...
Advanced Materials Interfaces 7 (18), 2000422, 2020
162020
Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ...
2D Materials 6 (4), 045020, 2019
152019
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