Edward Yi chang
Edward Yi chang
National Chico Tung university
Verified email at mail.nctu.edu.tw
TitleCited byYear
Coherent phonon manipulation in coupled mechanical resonators
H Okamoto, A Gourgout, CY Chang, K Onomitsu, I Mahboob, EY Chang, ...
Nature Physics 9 (8), 480-484, 2013
2022013
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition metal-oxide …
HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ...
Applied Physics Letters 97 (4), 042903, 2010
1232010
Passivation of GaAs FET's with PECVD silicon nitride films of different stress states
EY Chang, GT Cibuzar, KP Pande
IEEE transactions on electron devices 35 (9), 1412-1418, 1988
1101988
High electron mobility transistor and method for fabricating the same
EY Chang, CI Kuo, HT Hsu
US Patent 8,169,002, 2012
992012
InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications
EY Chang, CI Kuo, HT Hsu, CY Chiang, Y Miyamoto
Applied Physics Express 6 (3), 034001, 2013
822013
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
TE Hsieh, EY Chang, YZ Song, YC Lin, HC Wang, SC Liu, S Salahuddin, ...
IEEE Electron Device Letters 35 (7), 732-734, 2014
732014
Monolithic 3D CMOS using layered semiconductors
AB Sachid, M Tosun, SB Desai, CY Hsu, DH Lien, SR Madhvapathy, ...
Advanced Materials 28 (13), 2547-2554, 2016
632016
Thermal stability of Cu/Ta/GaAs multilayers
CY Chen, L Chang, EY Chang, SH Chen, DF Chang
Applied Physics Letters 77 (21), 3367-3369, 2000
622000
Layered MoS2 grown on c ‐sapphire by pulsed laser deposition
YT Ho, CH Ma, TT Luong, LL Wei, TC Yen, WT Hsu, WH Chang, YC Chu, ...
physica status solidi (RRL)–Rapid Research Letters 9 (3), 187-191, 2015
562015
Growth of high-quality Ge epitaxial layers on Si (100)
G Luo, TH Yang, EY Chang, CY Chang, KA Chao
Japanese journal of applied physics 42 (5B), L517, 2003
562003
5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
YL Lai, EY Chang, CY Chang, TK Chen, TH Liu, SP Wang, TH Chen, ...
IEEE Electron Device Letters 17 (5), 229-231, 1996
561996
Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier
CY Chen, EY Chang, L Chang, SH Chen
IEEE Transactions on Electron Devices 48 (6), 1033-1036, 2001
552001
The roles of threading dislocations on electrical properties of AlGaN/GaN heterostructure grown by MBE
YY Wong, EY Chang, TH Yang, JR Chang, JT Ku, MK Hudait, WC Chou, ...
Journal of The Electrochemical Society 157 (7), H746-H749, 2010
492010
Fabrication of antireflective sub-wavelength structures on silicon nitride using nano cluster mask for solar cell application
KC Sahoo, MK Lin, EY Chang, YY Lu, CC Chen, JH Huang, CW Chang
Nanoscale research letters 4 (7), 680, 2009
492009
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
CT Chang, TH Hsu, EY Chang, YC Chen, HD Trinh, KJ Chen
Electronics letters 46 (18), 1280-1281, 2010
472010
Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain
CT Chang, SK Hsiao, EY Chang, CY Lu, JC Huang, CT Lee
IEEE electron device letters 30 (3), 213-215, 2009
472009
Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
JY Shiu, JC Huang, V Desmaris, CT Chang, CY Lu, K Kumakura, ...
IEEE electron device letters 28 (6), 476-478, 2007
452007
Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate
YC Lien, EY Chang, HC Chang, LH Chu, GW Huang, HM Lee, CS Lee, ...
IEEE Electron Device Letters 25 (6), 348-350, 2004
442004
Backside copper metallisation of GaAs MESFETs
CY Chen, EY Chang, L Chang, SH Chen
Electronics Letters 36 (15), 1317-1318, 2000
442000
Electrical Characterization of/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments
HD Trinh, G Brammertz, EY Chang, CI Kuo, CY Lu, YC Lin, HQ Nguyen, ...
IEEE electron device letters 32 (6), 752-754, 2011
382011
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Articles 1–20