| Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 symposium on VLSI technology, T230-T231, 2017 | 915 | 2017 |
| 14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017 | 276 | 2017 |
| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 192 | 2016 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 89 | 2018 |
| Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ... Journal of Applied Physics 116 (1), 2014 | 79 | 2014 |
| Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 99 (17), 2011 | 65 | 2011 |
| High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ... 2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017 | 62 | 2017 |
| Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 102 (13), 2013 | 53 | 2013 |
| Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, S KC, B Brennan, X Qin, S McDonnell, ... Applied Physics Letters 103 (6), 2013 | 48 | 2013 |
| Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer DepositedNanolaminate B Chakrabarti, RV Galatage, EM Vogel IEEE electron device letters 34 (7), 867-869, 2013 | 48 | 2013 |
| Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ... Applied Physics Letters 96 (10), 2010 | 40 | 2010 |
| Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ... ECS transactions 25 (6), 113, 2009 | 36 | 2009 |
| Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 34 | 2016 |
| Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ... Microelectronic engineering 88 (7), 1083-1086, 2011 | 34 | 2011 |
| A comparative study of strain and Ge content in Si1−xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs CH Lee, S Mochizuki, RG Southwick, J Li, X Miao, R Bao, T Ando, ... 2017 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2017 | 27 | 2017 |
| Chemical and electrical characterization of the HfO2/InAlAs interface B Brennan, RV Galatage, K Thomas, E Pelucchi, PK Hurley, J Kim, ... Journal of Applied Physics 114 (10), 2013 | 24 | 2013 |
| The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ... The Journal of Chemical Physics 143 (16), 2015 | 20 | 2015 |
| Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ... 2010 Symposium on VLSI Technology, 183-184, 2010 | 20 | 2010 |
| Surface and interfacial reaction study of InAs (100)-crystalline oxide interface DM Zhernokletov, P Laukkanen, H Dong, RV Galatage, B Brennan, ... Applied Physics Letters 102 (21), 2013 | 16 | 2013 |
| Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ... Applied Physics Letters 100 (15), 2012 | 15 | 2012 |
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of Technology在 mse.gatech.edu 的電子郵件地址已通過驗證
