| Chip substrate resistance modeling technique for integrated circuit design TA Johnson, RW Knepper, V Marcello, W Wang IEEE transactions on computer-aided design of integrated circuits and …, 1984 | 114 | 1984 |
| Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface RK Cook, RW Knepper, SK Kulkarni, RC Lange, PA Ronsheim, ... US Patent 5,194,397, 1993 | 64 | 1993 |
| Method for forming a narrow channel length MOS field effect transistor WS Johnson, RW Knepper US Patent 4,078,947, 1978 | 42 | 1978 |
| Enhancement/depletion mode field effect transistor driver RW Knepper US Patent 4,071,783, 1978 | 42 | 1978 |
| A 300-V LDMOS analog-multiplexed driver for MEMS devices S Dai, RW Knepper, MN Horenstein IEEE Transactions on Circuits and Systems I: Regular Papers 62 (12), 2806-2816, 2015 | 31 | 2015 |
| Advanced bipolar transistor modeling: Process and device simulation tools for today's technology RW Knepper, SP Gaur, FY Chang, GR Srinivasan IBM journal of research and development 29 (3), 218-228, 1985 | 30 | 1985 |
| Two-dimensional process modeling: A description of the SAFEPRO program RR O'Brien, CM Hsieh, JS Moore, RF Lever, PC Murley, KW Brannon, ... IBM journal of research and development 29 (3), 229-241, 1985 | 26 | 1985 |
| High speed DRAM local bit line sense amplifier RH Dennard, RW Knepper US Patent 6,426,905, 2002 | 25 | 2002 |
| Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming SA Abbas, CS Chang, LB Freeman Jr, RW Knepper US Patent 3,961,355, 1976 | 24 | 1976 |
| A low-noise, wideband preamplifier for a Fourier-transform ion cyclotron resonance mass spectrometer R Mathur, RW Knepper, PB O’Connor Journal of the American Society for Mass Spectrometry 18 (12), 2233-2241, 2007 | 23 | 2007 |
| A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy SE Fischer, RK Cook, RW Knepper, RC Lange, K Nummy, DC Ahlgren, ... International Technical Digest on Electron Devices Meeting, 890-892, 1989 | 22 | 1989 |
| Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced RD Kimmel, RW Knepper, R Levi US Patent 4,651,302, 1987 | 22 | 1987 |
| Dynamic depletion mode: An E/D mosfet circuit method for improved performance RW Knepper IEEE Journal of Solid-State Circuits 13 (5), 542-548, 1978 | 18 | 1978 |
| Vertical-gate CMOS compatible lateral bipolar transistor CM Hsieh, LLG Hsu, SN Mei, RW Knepper, LF Wagner Jr US Patent 5,446,312, 1995 | 13 | 1995 |
| A low-noise broadband cryogenic preamplifier operated in a high-field superconducting magnet R Mathur, RW Knepper, PB O'Connor IEEE transactions on applied superconductivity 18 (4), 1781-1789, 2008 | 12 | 2008 |
| Differential Sensing of Substrate Noise in Mixed-Signal 0.18-BiCMOS Technology H Dai, RW Knepper IEEE electron device letters 29 (8), 898-901, 2008 | 12 | 2008 |
| Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor CM Hsieh, LLG Hsu, SN Mei, RW Knepper, LF Wagner Jr US Patent 5,371,022, 1994 | 11 | 1994 |
| Field effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devices RW Knepper US Patent 4,093,875, 1978 | 11 | 1978 |
| Modeling and Experimental Measurement of Active Substrate-Noise Suppression in Mixed-Signal 0.18- BiCMOS Technology H Dai, RW Knepper IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2009 | 9 | 2009 |
| Modeling advanced bipolar devices for high performance applications RW Knepper International Technical Digest on Electron Devices, 177-180, 1990 | 9 | 1990 |
