| FinFET modeling for IC simulation and design: using the BSIM-CMG standard YS Chauhan, D Lu, S Vanugopalan, S Khandelwal, JP Duarte, ... Academic Press, 2015 | 247 | 2015 |
| Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ... IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016 | 220 | 2016 |
| Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices S Khandelwal, YS Chauhan, TA Fjeldly IEEE Transactions on Electron Devices 59 (10), 2856-2860, 2012 | 191 | 2012 |
| Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior G Pahwa, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 65 (11), 5130-5136, 2018 | 152 | 2018 |
| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 146 | 2018 |
| BSIM6: Analog and RF compact model for bulk MOSFET YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ... IEEE Transactions on Electron Devices 61 (2), 234-244, 2013 | 146 | 2013 |
| BSIM—SPICE models enable FinFET and UTB IC designs N Paydavosi, S Venugopalan, YS Chauhan, JP Duarte, S Jandhyala, ... IEEE Access 1, 201-215, 2013 | 144 | 2013 |
| Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures G Pahwa, T Dutta, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 65 (3), 867-873, 2018 | 140 | 2018 |
| Robust surface-potential-based compact model for GaN HEMT IC design S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ... IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013 | 140 | 2013 |
| BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, MAU Karim, ... IEEE Transactions on Electron Devices 59 (8), 2019-2026, 2012 | 125 | 2012 |
| Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan The Journal of Physical Chemistry C 118 (51), 30309-30314, 2014 | 118 | 2014 |
| Compact model for ferroelectric negative capacitance transistor with MFIS structure G Pahwa, T Dutta, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 64 (3), 1366-1374, 2017 | 116 | 2017 |
| Analytical modeling of the suspended-gate FET and design insights for low-power logic K Akarvardar, C Eggimann, D Tsamados, YS Chauhan, GC Wan, ... IEEE transactions on Electron Devices 55 (1), 48-59, 2007 | 110 | 2007 |
| Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene P Kumar, BS Bhadoria, S Kumar, S Bhowmick, YS Chauhan, A Agarwal Physical Review B 93 (19), 195428, 2016 | 108 | 2016 |
| BSIM-CMG: Standard FinFET compact model for advanced circuit design JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ... ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 106 | 2015 |
| Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior SA Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 63 (2), 565-572, 2015 | 101 | 2015 |
| Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM T Dutta, G Pahwa, AR Trivedi, S Sinha, A Agarwal, YS Chauhan IEEE Electron Device Letters 38 (8), 1161-1164, 2017 | 95 | 2017 |
| RF SOI switch FET design and modeling tradeoffs for GSM applications S Parthasarathy, A Trivedi, S Sirohi, R Groves, M Olsen, YS Chauhan, ... 2010 23rd International Conference on VLSI Design, 194-199, 2010 | 95 | 2010 |
| ASM GaN: Industry standard model for GaN RF and power devices—Part-II: Modeling of charge trapping SA Albahrani, D Mahajan, J Hodges, YS Chauhan, S Khandelwal IEEE Transactions on Electron Devices 66 (1), 87-94, 2018 | 94 | 2018 |
| BSIM—Industry standard compact MOSFET models YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ... 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 92 | 2012 |
sourabh khandelwalUC Berkeley在 berkeley.edu 的電子郵件地址已通過驗證
