Ya-Fen Wu (吳亞芬)
Ya-Fen Wu (吳亞芬)
Department of Electronic Engineering, Ming Chi University of Technology (明志科技大學電子工程系)
在 mail.mcut.edu.tw 的電子郵件地址已通過驗證
標題引用次數年份
The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
JC Wang, CH Fang, YF Wu, WJ Chen, DC Kuo, PL Fan, JA Jiang, TE Nee
Journal of Luminescence 132 (2), 429-433, 2012
212012
Carrier localization effect on luminescence spectra of III–V heterostructures
YF Wu, JC Lee, TE Nee, JC Wang
Journal of Luminescence 131 (7), 1267-1271, 2011
192011
Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of quantum dots
TE Nee, YF Wu, CC Cheng, HT Shen
Journal of applied physics 99 (1), 013506, 2006
182006
Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells
JC Lee, YF Wu, YP Wang, TE Nee
Journal of Crystal Growth 310 (23), 5143-5146, 2008
172008
Temperature and excitation dependence of photoluminescence spectra of InAs/GaAs quantum dot heterostructures
TE Nee, YF Wu, RM Lin, JC Lee
Emerging Technologies-Nanoelectronics, 2006 IEEE Conference on, 433-437, 2006
102006
Effect of multiquantum barriers on performance of multiple-quantum-well light-emitting diodes
TE Nee, JC Wang, HT Shen, YF Wu
Journal of Applied Physics 102 (3), 033101, 2007
82007
Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices
YF Wu, HP Hsu, TY Liu
Solid-State Electronics 68, 63-67, 2012
72012
Characterization of nanocrystallites of ingan/gan multiquantum wells by high-resolution x-ray diffraction
JC Lee, YF Wu, TE Nee, JC Wang
IEEE Transactions on Nanotechnology 10 (4), 827-831, 2011
72011
Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes
JC Lee, YF Wu
Thin Solid Films 518 (24), 7437-7440, 2010
72010
Anomalous excitation dependence of electroluminescence in light-emitting diodes
TE Nee, HT Shen, JC Wang, YF Wu
Journal of applied physics 101 (2), 023703, 2007
72007
The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers
TE Nee, JC Wang, HT Shen, YF Wu
Journal of crystal growth 298, 714-718, 2007
62007
Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures
TE Nee, YF Wu, RM Lin
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
52005
Investigation of the thermal photocarrier interaction–recombination in ZnO nanostructures fabricated by the hydrothermal method
HI Chen, JJ Hsiao, CH Fang, JA Jiang, JC Wang, YF Wu, TE Nee
Journal of Luminescence 190, 136-140, 2017
42017
Characterization of the structural and optical properties of CuIn1−xGaxSe2 QJ;thin films by X-ray diffraction
YF Wu, HP Hsu, HI Chen
Journal of Luminescence 142, 81-85, 2013
42013
Investigation of strain effect in InGaN/GaN multi-quantum wells
YF Wu
NISCAIR-CSIR, India, 2013
32013
Observations of electrical and luminescence anomalies in blue light-emitting diodes
TE Nee, JC Wang, HT Shen, CH Lin, YF Wu
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (4 …, 2006
32006
Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells
JJ Hsiao, HI Chen, YJ Huang, JC Wang, BY Lu, YF Wu, TE Nee
Journal of Luminescence 168, 309-314, 2015
22015
Strain modulated defect luminescence in ZnO nanostructures grown on Si substrates
HI Chen, JJ Hsiao, YJ Huang, JC Wang, YF Wu, BY Lu, TE Nee
Journal of Luminescence 168, 304-308, 2015
22015
Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
TE Nee, JC Wang, HY Chen, WY Chen, KY Cheng, HT Shen, YF Wu, ...
Japanese Journal of Applied Physics 47 (9R), 7148, 2008
22008
Anomalous optical characteristics of carrier transfer process in quaternary AlInGaN multiple quantum well heterostructure
TE Nee, CC Ke, CW Hung, JC Wang, HT Shen, YF Wu, CC Chuo, ZH Lee
Japanese journal of applied physics 46 (4S), 2558, 2007
22007
系統目前無法執行作業,請稍後再試。
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