追蹤
Chih-Fang Huang
Chih-Fang Huang
在 ee.nthu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Synthesis of graphene on silicon carbide substrates at low temperature
ZY Juang, CY Wu, CW Lo, WY Chen, CF Huang, JC Hwang, FR Chen, ...
Carbon 47 (8), 2026-2031, 2009
2592009
Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
H Huang, YC Liang, GS Samudra, TF Chang, CF Huang
IEEE Transactions on Power Electronics 29 (5), 2164-2173, 2013
1232013
High current gain 4H-SiC NPN bipolar junction transistors
CF Huang, JA Cooper
IEEE Electron Device Letters 24 (6), 396-398, 2003
652003
Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments
F Zhao, MM Islam, CF Huang
Materials Letters 65 (3), 409-412, 2011
642011
6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack
YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ...
IEEE Electron Device Letters 36 (4), 381-383, 2015
522015
4H-SiC npn bipolar junction transistors with BV/sub CEO/> 3,200 V
CF Huang, JA Cooper
Proceedings of the 14th international symposium on power semiconductor …, 2002
472002
0.18 um BCD technology with best-in-class LDMOS from 6 V to 45 V
TY Huang, WY Liao, CY Yang, CH Huang, WCV Yeh, CF Huang, KH Lo, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
452014
Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
TF Chang, TC Hsiao, CF Huang, WH Kuo, SF Lin, GS Samudra, YC Liang
IEEE Transactions on Electron Devices 62 (2), 339-345, 2014
432014
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
YH Wang, YC Liang, GS Samudra, TF Chang, CF Huang, L Yuan, GQ Lo
Semiconductor Science and Technology 28 (12), 125010, 2013
402013
High-Performance 1-GaN n-MOSFET With MgO/MgO–Stacked Gate Dielectrics
KT Lee, CF Huang, J Gong, CT Lee
Ieee Electron Device Letters 32 (3), 306-308, 2011
292011
Power microelectronics: device and process technologies
YC Liang, GS Samudra, CF Huang
World Scientific, 2017
28*2017
Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
TF Chang, CF Huang, TY Yang, CW Chiu, TY Huang, KY Lee, F Zhao
Solid-State Electronics 105, 12-15, 2015
282015
Demonstration of Lateral IGBTs in 4H-SiC
KW Chu, WS Lee, CY Cheng, CF Huang, F Zhao, LS Lee, YS Chen, ...
IEEE Electron Device Letters 34 (2), 286-288, 2013
282013
Design and fabrication of 4H–SiC lateral high-voltage devices on a semi-insulating substrate
WS Lee, KW Chu, CF Huang, LS Lee, MJ Tsai, KY Lee, F Zhao
IEEE Transactions on Electron Devices 59 (3), 754-760, 2011
282011
Demonstration of 3500-V 4H-SiC Lateral MOSFETs
WS Lee, CW Lin, MH Yang, CF Huang, J Gong, Z Feng
IEEE Electron Device Letters 32 (3), 360-362, 2011
272011
A 700-V device in high-voltage power ICs with low on-state resistance and enhanced SOA
FJ Yang, J Gong, RY Su, KH Huo, CL Tsai, CC Cheng, RH Liou, HC Tuan, ...
IEEE Transactions on Electron Devices 60 (9), 2847-2853, 2013
262013
0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
HL Chou, PC Su, JCW Ng, PL Wang, HT Lu, CJ Lee, WJ Syue, SY Yang, ...
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
262012
Electrical characteristics of Al2O3/TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4) 2SX treatments
KT Lee, CF Huang, J Gong, BH Liou
IEEE electron device letters 30 (9), 907-909, 2009
262009
Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge
CF Huang, HC Hsu, KW Chu, LH Lee, MJ Tsai, KY Lee, F Zhao
IEEE Transactions on Electron Devices 62 (2), 354-358, 2014
242014
Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current
K Ren, YC Liang, CF Huang
IEEE Transactions on Electron Devices 65 (4), 1348-1354, 2018
232018
系統目前無法執行作業,請稍後再試。
文章 1–20