| Compact models of negative-capacitance FinFETs: Lumped and distributed charge models JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2016 | 105 | 2016 |
| Engineering Negative Differential Resistance in NCFETs for Analog Applications H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, MY Kao, ... IEEE Transactions on Electron Devices 65 (5), 2033-2039, 2018 | 104 | 2018 |
| Proposal for capacitance matching in negative capacitance field-effect transistors H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ... IEEE Electron Device Letters 40 (3), 463-466, 2019 | 85 | 2019 |
| Optimization of negative-capacitance vertical-tunnel FET (NCVT-FET) VPH Hu, HH Lin, YK Lin, C Hu IEEE Transactions on Electron Devices 67 (6), 2593-2599, 2020 | 71 | 2020 |
| Analysis and modeling of inner fringing field effect on negative capacitance FinFETs YK Lin, H Agarwal, P Kushwaha, MY Kao, YH Liao, K Chatterjee, ... IEEE Transactions on Electron Devices 66 (4), 2023-2027, 2019 | 48 | 2019 |
| Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ... IEEE Electron Device Letters 41 (1), 179-182, 2019 | 47 | 2019 |
| Spacer engineering in negative capacitance FinFETs YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ... IEEE Electron Device Letters 40 (6), 1009-1012, 2019 | 45 | 2019 |
| NCFET design considering maximum interface electric field H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, JP Duarte, ... IEEE Electron Device Letters 39 (8), 1254-1257, 2018 | 45 | 2018 |
| Response speed of negative capacitance FinFETs D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 49-50, 2018 | 45 | 2018 |
| Variation caused by spatial distribution of dielectric and ferroelectric grains in a negative capacitance field-effect transistor MY Kao, AB Sachid, YK Lin, YH Liao, H Agarwal, P Kushwaha, JP Duarte, ... IEEE Transactions on Electron Devices 65 (10), 4652-4658, 2018 | 41 | 2018 |
| Characterization and modeling of flicker noise in FinFETs at advanced technology node P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ... IEEE Electron Device Letters 40 (6), 985-988, 2019 | 39 | 2019 |
| Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode YK Lin, JG Hwu IEEE Transactions on Electron Devices 61 (9), 3217-3222, 2014 | 38 | 2014 |
| Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved Sensitivity in Presence of Parasitic Capacitance H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, HL Chang, ... IEEE Transactions on Electron Devices 65 (3), 1211-1216, 2018 | 34 | 2018 |
| Anomalously beneficial gate-length scaling trend of negative capacitance transistors YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 40 (11), 1860-1863, 2019 | 32 | 2019 |
| BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect H Agarwal, C Gupta, R Goel, P Kushwaha, YK Lin, MY Kao, JP Duarte, ... IEEE Transactions on Electron Devices 66 (10), 2019 | 30 | 2019 |
| Optimization of NCFET by matching dielectric and ferroelectric nonuniformly along the channel MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ... IEEE Electron Device Letters 40 (5), 822-825, 2019 | 24 | 2019 |
| A Predictive Tunnel FET Compact Model With Atomistic Simulation Validation YK Lin, S Khandelwal, JP Duarte, HL Chang, S Salahuddin, C Hu IEEE Transactions on Electron Devices 64 (2), 599-605, 2017 | 23 | 2017 |
| Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors YK Lin, JG Hwu IEEE Transactions on Electron Devices 61 (10), 3562-3565, 2014 | 20 | 2014 |
| Effect of polycrystallinity and presence of dielectric phases on NC-FinFET variability YK Lin, MY Kao, H Agarwal, YH Liao, P Kushwaha, K Chatterjee, ... 2018 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2018 | 19 | 2018 |
| Modeling of advanced RF bulk FinFETs P Kushwaha, H Agarwal, YK Lin, MY Kao, JP Duarte, HL Chang, W Wong, ... IEEE Electron Device Letters 39 (6), 791-794, 2018 | 17 | 2018 |
chenming huUniversity of California, Berkeley在 eecs.berkeley.edu 的電子郵件地址已通過驗證
