Photo–roll lithography (PRL) for continuous and scalable patterning with application in flexible electronics JG Ok, MK Kwak, CM Huard, HS Youn, LJ Guo Taylor and Francis, 2013 | 119 | 2013 |
Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation S Huang, C Huard, S Shim, SK Nam, IC Song, S Lu, MJ Kushner Journal of Vacuum Science & Technology A 37 (3), 2019 | 94 | 2019 |
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions CM Huard, Y Zhang, S Sriraman, A Paterson, KJ Kanarik, MJ Kushner Journal of Vacuum Science & Technology A 35 (3), 2017 | 91 | 2017 |
Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator Y Zhang, C Huard, S Sriraman, J Belen, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 35 (2), 021303, 2017 | 74 | 2017 |
Highly stable and stretchable graphene–polymer processed silver nanowires hybrid electrodes for flexible displays Q Zhang, Y Di, CM Huard, LJ Guo, J Wei, J Guo Journal of Materials Chemistry C 3 (7), 1528-1536, 2015 | 74 | 2015 |
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features CM Huard, Y Zhang, S Sriraman, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 35 (5), 2017 | 70 | 2017 |
Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas CM Huard, S Sriraman, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 36 (6), 2018 | 62 | 2018 |
Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors M Chen, Y Wang, N Shepherd, C Huard, J Zhou, LJ Guo, W Lu, X Liang ACS nano, 2017 | 53 | 2017 |
ITO‐free, compact, color liquid crystal devices using integrated structural color filters and graphene electrodes J Guo, CM Huard, Y Yang, YJ Shin, KT Lee, LJ Guo Wiley Periodicals, Inc., 2014 | 41 | 2014 |
Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas CM Huard, SJ Lanham, MJ Kushner Journal of Physics D: Applied Physics 51 (15), 155201, 2018 | 20 | 2018 |
Electrowetting on flexible, transparent and conducting single-layer graphene XB Tan, J Yang, P Zeng, EGR Kim, C Huard, MMC Cheng 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems …, 2012 | 9 | 2012 |
Trilayer hardmask lithography and etch for BEOL manufacturing P Panneerchelvam, CM Huard, A Agarwal, AV Pret, A Mani, R Gronheid, ... Metrology, Inspection, and Process Control XXXVI 12053, 625-631, 2022 | 8 | 2022 |
Control and enhancement of graphene sensitivity by engineering edge defects X Tan, C Huard, HJ Chuang, MW Lin, Z Zhou, MMC Cheng SENSORS, 2012 IEEE, 1-4, 2012 | 5 | 2012 |
Process optimization for shallow trench isolation etch using computational models S Huang, P Panneerchelvam, CM Huard, S Sridhar, PLG Ventzek, ... Journal of Vacuum Science & Technology A 41 (5), 2023 | 4 | 2023 |
Evolution of lithography-to-etch bias in multi-patterning processes P Panneerchelvam, A Agarwal, CM Huard, AV Pret, A Mani, R Gronheid, ... Journal of Vacuum Science & Technology B 40 (6), 2022 | 4 | 2022 |
On the origin and evolution of hotspots in multipatterning processes P Panneerchelvam, CM Huard, T Graves, AV Pret, R Gronheid, A Agarwal, ... Journal of Vacuum Science & Technology B 41 (4), 2023 | 2 | 2023 |
Nano-Scale Feature Profile Modeling of Plasma Material Processing CM Huard Ph. D. Thesis, 2018 | 2 | 2018 |
Contact Edge Roughness In The Etching Of High Aspect Ratio Contacts In Sio2 S Huang, C Huard, MJ Kushner, S Shim, S Lee, IC Song, S Lu 2017 IEEE International Conference on Plasma Science (ICOPS), 1-1, 2017 | 1 | 2017 |
Origins of aspect ratio dependent etching in plasma materials processing CM Huard, MJ Kushner, Y Zhang, S Sriraman, JR Belen, A Paterson 2016 IEEE International Conference on Plasma Science (ICOPS), 1-1, 2016 | 1 | 2016 |
System and method to adjust a kinetics model of surface reactions during plasma processing A Agarwal, C Huard, Y Zhang, H Pu, X Li, P Panneerchelvam, F Han, ... US Patent 11,966,203, 2024 | | 2024 |