追蹤
Wenjun Tang
Wenjun Tang
在 mails.tsinghua.edu.cn 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface
M Lee, W Tang, B Xue, J Wu, M Ma, Y Wang, Y Liu, D Fan, V Narayanan, ...
Proceedings of the ACM/IEEE International Symposium on Low Power Electronics …, 2020
202020
Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing
J Liu, C Sun, W Tang, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li
2021 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2021
162021
Almost-nonvolatile IGZO-TFT-based near-sensor in-memory computing
J Liu, W Tang, Y Liu, H Yang, X Li
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2021
112021
Computing-in-memory with thin-film transistors: challenges and opportunities
W Tang, J Liu, H Li, D Chen, C Jiang, X Li, H Yang
Flexible and Printed Electronics 7 (2), 024001, 2022
52022
SAMBA: Single-ADC multi-bit accumulation compute-in-memory using nonlinearity-compensated fully parallel analog adder tree
Y Chen, G Yin, M Zhou, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ...
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
42023
FeFET-based logic-in-memory supporting SA-free write-back and fully dynamic access with reduced bitline charging activity and recycled bitline charge
W Tang, M Lee, J Wu, Y Xu, Y Yu, Y Liu, K Ni, Y Wang, H Yang, ...
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
32023
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing
W Tang, J Liu, C Sun, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
22023
Hidden-ROM: A compute-in-ROM architecture to deploy large-scale neural networks on chip with flexible and scalable post-fabrication task transfer capability
Y Chen, G Yin, M Lee, W Tang, Z Yang, Y Liu, H Yang, X Li
Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided …, 2022
22022
A 66.67kHz 4.953 nJ/Conv-Step 5b Fully Integrated Asynchronous SAR ADC Using LTPS TFTs
H Li, J Liu, W Tang, H Yang, C Jiang, S Zhang, X Li
2023 IEEE International Flexible Electronics Technology Conference (IFETC), 1-3, 2023
12023
Victor: A variation-resilient approach using cell-clustered charge-domain computing for high-density high-throughput MLC CiM
M Lee, W Tang, Y Chen, J Wu, H Zhong, Y Xu, Y Liu, H Yang, ...
2023 60th ACM/IEEE Design Automation Conference (DAC), 1-6, 2023
12023
A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface
G Yin, M Zhou, Y Chen, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ...
arXiv preprint arXiv:2212.04320, 2022
12022
High-density energy-efficient charge-domain computing based on CAA-IGZO TFT with BEOL-compatible 3D integration
W Tang, J Liu, H Yang, C Jiang, X Li
2022 IEEE International Flexible Electronics Technology Conference (IFETC), 1-2, 2022
12022
Compute-in-memory devices, neural network accelerators, and electronic devices
X Li, G Yin, Y Chen, L Cheong, L Tianyu, W Tang, LEE Mingyen, DU Xirui, ...
US Patent App. 18/342,917, 2024
2024
TFT-Based Near-Sensor In-Memory Computing: Circuits and Architecture Perspectives of Large-Area eDRAM and ROM CiM Chips
J Liu, W Tang, H Li, D Chen, W Long, Y Liu, C Jiang, H Yang, X Li
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
2023
30 Mb/mm2/layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA …
W Tang, C Chen, J Liu, C Zhang, C Gu, X Duan, H Yang, L Li, X Li, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM With 3984-kb/mm Density in 65-nm …
G Yin, Y Chen, M Zhou, W Tang, M Lee, Z Yang, T Liao, X Du, ...
IEEE Journal of Solid-State Circuits, 2023
2023
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