| Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes PD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 142 | 2014 |
| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ... 2D Materials 5 (3), 031002, 2018 | 91 | 2018 |
| Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Applied Physics Letters 111 (3), 2017 | 75 | 2017 |
| Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ... ACS Applied Electronic Materials 1 (2), 210-219, 2019 | 57 | 2019 |
| Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ... Applied Physics Letters 112 (25), 2018 | 52 | 2018 |
| Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy P Zhao, A Azcatl, YY Gomeniuk, P Bolshakov, M Schmidt, SJ McDonnell, ... ACS applied materials & interfaces 9 (28), 24348-24356, 2017 | 50 | 2017 |
| Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric P Zhao, A Azcatl, P Bolshakov, J Moon, CL Hinkle, PK Hurley, ... J. Vac. Sci. Technol. B 35, 01A118, 2017 | 50 | 2017 |
| Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Microelectronic Engineering 178, 190-193, 2017 | 37 | 2017 |
| Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics P Zhao, PB Vyas, S McDonnell, P Bolshakov-Barrett, A Azcatl, CL Hinkle, ... Microelectronic Engineering 147, 151-154, 2015 | 35 | 2015 |
| High-stability pH sensing with a few-layer MoS2 field-effect transistor H Wang, P Zhao, X Zeng, CD Young, W Hu Nanotechnology 30 (37), 375203, 2019 | 33 | 2019 |
| Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ... ACS Applied Electronic Materials 1 (8), 1372-1377, 2019 | 25 | 2019 |
| (Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric CD Young, P Zhao, P Bolshakov, A Azcatl, PK Hurley, YY Gomeniuk, ... ECS Transactions 75 (5), 153-162, 2016 | 14 | 2016 |
| Investigating interface states and oxide traps in the MoS2/oxide/Si system E Coleman, G Mirabelli, P Bolshakov, P Zhao, E Caruso, F Gity, ... Solid-State Electronics 186, 108123, 2021 | 7 | 2021 |
| (Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ... Meeting Abstracts, 219-225, 2017 | 7* | 2017 |
| Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study P Zhao, A Azcatl, P Bolshakov, PK Hurley, RM Wallace, CD Young Microelectronic Test Structures (ICMTS), 2016 International Conference on …, 2016 | 7 | 2016 |
| Relatively low-temperature processing and its impact on device performance and reliability CD Young, P Bolshakov, RAR Davila, P Zhao, C Smyth, ... ECS Transactions 90 (1), 89, 2019 | 1 | 2019 |
| Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2field-effect-transistors P Bolshakov, P Zhao, CM Smyth, A Azcatl, RM Wallace, CD Young, ... 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017 | 1 | 2017 |
| Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ... American Institute of Physics Inc., 2019 | | 2019 |
| Electrical characterization of process induced effects on non-silicon devices CD Young, P Bolshakov, RA Rodriguez-Davila, P Zhao, A Khosravi, ... 2018 International Conference on IC Design & Technology (ICICDT), 173-176, 2018 | | 2018 |
| Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time P Bolshakov, A Khosravi, P Zhao, RM Wallace, CD Young, PK Hurley 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | | 2018 |
