Dayanand KUMAR

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Dr. Umesh ChandIME_A-Star, SingaporeVerified email at ime.a-star.edu.sg
Aluguri RakeshNational Chiao Tung University, Hsinchu, TaiwanVerified email at nctu.edu.tw
Nazek El-AtabAssistant Professor of Electrical Engineering at King Abdullah University of Science and TechnologyVerified email at kaust.edu.sa
Hanrui LiKing Abdullah University of Science and TechnologyVerified email at kaust.edu.sa
Sailesh Rajasekaran Ph.DSenior Hardware Design Engineer, Wiwynn CorporationVerified email at nycu.edu.tw
Diing Shenp ANGNanyang Technological University, SingaporeVerified email at ntu.edu.sg
Saransh ShrivastavaPostdoctoral Research Fellow, National Yang Ming Chiao Tung University, TaiwanVerified email at nycu.edu.tw
Jackson Chun-Yang HuangDepartment of Electrical and Computer Engineering, National University of SingaporeVerified email at nus.edu.sg
Firman Mangasa SimanjuntakLecturer, Marie-Curie Fellow - University of SouthamptonVerified email at soton.ac.uk
Lana JoharjiPhD Student at The Pennsylvania State UniversityVerified email at psu.edu
Dr. Pratibha PalKing Abdullah University of Science and TechnologyVerified email at kaust.edu.sa
Amit SinghDeaprtment of Physics, University of ManchesterVerified email at manchester.ac.uk

Dayanand KUMAR

King Abdullah University of Science and Technology

Verified email at kaust.edu.sa

In-memory Light sensing In-memory computing Optical Memristor for Neuromorphic Computing Photo Sensors RRAM


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Metal oxide resistive switching memory: materials, properties and switching mechanisms D Kumar, R Aluguri, U Chand, TY Tseng Ceramics International 43, S547-S556, 2017	133	2017
Electrolyte-gated organic field-effect transistors for sensing applications F Buth, D Kumar, M Stutzmann, JA Garrido Applied Physics Letters 98 (15), 2011	125	2011
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer D Kumar, R Aluguri, U Chand, TY Tseng Applied Physics Letters 110 (20), 2017	76	2017
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition D Kumar, U Chand, WS Lew, TY Tseng IEEE Transactions on Electron Devices 67 (2), 493 - 498, 2020	55	2020
Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications D Kumar, H Li, UK Das, AM Syed, N El‐Atab Advanced Materials 35 (28), 2300446, 2023	39	2023
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture U Chand, CY Huang, D Kumar, TY Tseng Applied Physics Letters 107 (20), 2015	34	2015
Oxygen Vacancy Transition in HfO_x‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications A Saleem, D Kumar, A Singh, S Rajasekaran, TY Tseng Advanced Materials Technologies 7 (7), 2101208, 2022	32	2022
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications D Kumar, R Aluguri, U Chand, TY Tseng IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (3), 1296-1300, 2019	31	2019
One bipolar transistor selector - One resistive random access memory device for cross bar memory array R Aluguri, D Kumar, TY Tseng AIP Advances, 2017	31	2017
Enhanced linearity in CBRAM synapse by post oxide deposition annealing for neuromorphic computing applications CL Hsu, A Saleem, A Singh, D Kumar, TY Tseng IEEE Transactions on Electron Devices 68 (11), 5578-5584, 2021	29	2021
Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing KP SAIRAM, D KUMAR, DS ANG IEEE Access 8, 91648-91652, 2020	29	2020
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion D Kumar, R Aluguri, U Chand, TY Tseng Nanotechnology 29 (12), 125202, 2018	28	2018
ZrN-based flexible resistive switching memory D Kumar, U Chand, LW Siang, TY Tseng IEEE Electron Device Letters 41 (5), 705-708, 2020	27	2020
Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing D Kumar, S Shrivastava, A Saleem, A Singh, H Lee, YH Wang, TY Tseng ACS Applied Electronic Materials 4 (5), 2180-2190, 2022	24	2022
Visible Light Detection and Memory Capabilities in MgO/HfO₂ Bilayer-Based Transparent Structure for Photograph Sensing D Kumar, PS Kalaga, DS Ang IEEE Transactions on Electron Devices 67 (10), 4274-4280, 2020	22	2020
Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition R Aluguri, R Sailesh, D Kumar, TY Tseng Nanotechnology 30 (4), 045202, 2018	17	2018
Zn₂SnO₄ Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing S Shrivastava, YT Lin, B Pattanayak, S Pratik, CC Hsu, D Kumar, AS Lin, ... ACS Applied Electronic Materials 4 (4), 1784-1793, 2022	14	2022
Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device N Jain, SK Sharma, R Kumawat, PK Jain, D Kumar, R Vyas Micro and Nanostructures 169, 207366, 2022	12	2022
Interface ion-driven, highly stable synaptic memristor for neuromorphic applications U Gawai, CH Wu, D Kumar, KM Chang ACS Applied Electronic Materials 5 (4), 2439-2446, 2023	9	2023
An Opto-Electronic HfO_x-Based Transparent Memristive Synapse for Neuromorphic Computing System A Saleem, D Kumar, F Wu, LB Keong, TY Tseng IEEE Transactions on Electron Devices 70 (3), 1351-1358, 2023	9	2023

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