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Eamon O'Connor
Eamon O'Connor
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引用次數
引用次數
年份
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As …
É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
1722011
Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics
F Eltes, D Caimi, F Fallegger, M Sousa, E O’Connor, MD Rossell, ...
Acs Photonics 3 (9), 1698-1703, 2016
1312016
Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods
É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
1282009
Poly (9, 9-dioctylfluorene) nanowires with pronounced β-phase morphology: synthesis, characterization, and optical properties
D O'Carroll, D Iacopino, A O'Riordan, P Lovera, É O'Connor, GA O'Brien, ...
Advanced Materials 20 (1), 42-48, 2008
1272008
Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays
É O’Connor, A O’Riordan, H Doyle, S Moynihan, A Cuddihy, G Redmond
Applied physics letters 86 (20), 2005
782005
In situ H2S passivation of In0. 53Ga0. 47As/ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
722008
Near infrared electroluminescence from neodymium complex–doped polymer light emitting diodes
A O'Riordan, E O'Connor, S Moynihan, P Nockemann, P Fias, ...
Thin Solid Films 497 (1-2), 299-303, 2006
702006
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
692013
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment
É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 2011
662011
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
Institute of Electrical and Electronics Engineers (IEEE), 2012
652012
Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
652010
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
642007
Stabilization of ferroelectric HfxZr1− xO2 films using a millisecond flash lamp annealing technique
É O’Connor, M Halter, F Eltes, M Sousa, A Kellock, S Abel, J Fompeyrine
Apl Materials 6 (12), 2018
622018
Narrow bandwidth red electroluminescence from solution-processed lanthanide-doped polymer thin films
A O'Riordan, E O'Connor, S Moynihan, X Llinares, R Van Deun, P Fias, ...
Thin Solid Films 491 (1-2), 264-269, 2005
592005
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
572013
Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs
V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015
492015
Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
412011
Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
É O’Connor, K Cherkaoui, S Monaghan, D O’Connell, I Povey, P Casey, ...
Journal of Applied Physics 111 (12), 2012
362012
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS transactions 25 (6), 113, 2009
362009
Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al2O3 and HfO2
VV Afanas’ev, M Badylevich, A Stesmans, G Brammertz, A Delabie, ...
Applied Physics Letters 93 (21), 2008
362008
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