追蹤
Zeyuan Ni
Zeyuan Ni
Tokyo Electron Technology Solutions, Ltd.
在 tel.com 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Tunable bandgap in silicene and germanene
Z Ni, Q Liu, K Tang, J Zheng, J Zhou, R Qin, Z Gao, D Yu, J Lu
Nano letters 12 (1), 113-118, 2012
14742012
Tunable and sizable band gap in silicene by surface adsorption
R Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ...
Scientific reports 2 (1), 853, 2012
3042012
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ...
Scientific reports 6 (1), 21786, 2016
2982016
Does p-type ohmic contact exist in WSe 2–metal interfaces?
Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ...
Nanoscale 8 (2), 1179-1191, 2016
1902016
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu
Nanoscale 6 (13), 7609-7618, 2014
1862014
Half-metallic silicene and germanene nanoribbons: towards high-performance spintronics device
Y Wang, J Zheng, Z Ni, R Fei, Q Liu, R Quhe, C Xu, J Zhou, Z Gao, J Lu
Nano 7 (05), 1250037, 2012
1172012
Does the Dirac cone exist in silicene on metal substrates?
R Quhe, Y Yuan, J Zheng, Y Wang, Z Ni, J Shi, D Yu, J Yang, J Lu
Scientific Reports 4 (1), 5476, 2014
1152014
Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors
Z Ni, M Ye, J Ma, Y Wang, R Quhe, J Zheng, L Dai, D Yu, J Shi, J Yang, ...
Advanced Electronic Materials 2 (9), 1600191, 2016
1112016
Graphdiyne–metal contacts and graphdiyne transistors
Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ...
Nanoscale 7 (5), 2116-2127, 2015
1102015
Interfacial properties of bilayer and trilayer graphene on metal substrates
J Zheng, Y Wang, L Wang, R Quhe, Z Ni, WN Mei, Z Gao, D Yu, J Shi, J Lu
Scientific reports 3 (1), 2081, 2013
1022013
Tunable band gap in germanene by surface adsorption
M Ye, R Quhe, J Zheng, Z Ni, Y Wang, Y Yuan, G Tse, J Shi, Z Gao, J Lu
Physica E: Low-dimensional Systems and Nanostructures 59, 60-65, 2014
982014
Tunable band gap in few-layer graphene by surface adsorption
R Quhe, J Ma, Z Zeng, K Tang, J Zheng, Y Wang, Z Ni, L Wang, Z Gao, ...
Scientific Reports 3 (1), 1794, 2013
662013
All‐Metallic Vertical Transistors Based on Stacked Dirac Materials
Y Wang, Z Ni, Q Liu, R Quhe, J Zheng, M Ye, D Yu, J Shi, J Yang, J Li, ...
Advanced Functional Materials 25 (1), 68-77, 2015
652015
Silicene nanomesh
F Pan, Y Wang, K Jiang, Z Ni, J Ma, J Zheng, R Quhe, J Shi, J Yang, ...
Scientific reports 5 (1), 9075, 2015
532015
Strong band hybridization between silicene and Ag (1 1 1) substrate
Y Yuan, R Quhe, J Zheng, Y Wang, Z Ni, J Shi, J Lu
Physica E: Low-dimensional Systems and Nanostructures 58, 38-42, 2014
482014
Visualizing type-II Weyl points in tungsten ditelluride by quasiparticle interference
CL Lin, R Arafune, RY Liu, M Yoshimura, B Feng, K Kawahara, Z Ni, ...
ACS nano 11 (11), 11459-11465, 2017
472017
Germanene and stanene on two-dimensional substrates: Dirac cone and invariant
Z Ni, E Minamitani, Y Ando, S Watanabe
Physical Review B 96 (7), 075427, 2017
462017
The electronic structure of quasi-free-standing germanene on monolayer MX (M= Ga, In; X= S, Se, Te)
Z Ni, E Minamitani, Y Ando, S Watanabe
Physical Chemistry Chemical Physics 17 (29), 19039-19044, 2015
332015
Gate-induced half-metallicity in semihydrogenated silicene
F Pan, R Quhe, Q Ge, J Zheng, Z Ni, Y Wang, Z Gao, L Wang, J Lu
Physica E: Low-dimensional Systems and Nanostructures 56, 43-47, 2014
202014
Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions
Z Li, J Zheng, Z Ni, R Quhe, Y Wang, Z Gao, J Lu
Nanoscale 5 (15), 6999-7004, 2013
192013
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