| Mesostructured g-C3N4 nanosheets interconnected with V2O5 nanobelts as electrode for coin-cell-type-asymmetric supercapacitor device KC Devarayapalli, K Lee, HB Do, NN Dang, K Yoo, J Shim, SVP Vattikuti Materials Today Energy 21, 100699, 2021 | 70 | 2021 |
| Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo S Kim, TT Trinh, J Park, DP Pham, S Lee, HB Do, NN Dang, VA Dao, ... Scientific Reports 11 (1), 15524, 2021 | 54 | 2021 |
| Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ... IEEE Transactions on electron devices 61 (8), 2774-2778, 2014 | 45 | 2014 |
| Selective Semihydrogenation of Alkynes on Shape‐Controlled Palladium Nanocrystals J Chung, C Kim, H Jeong, T Yu, DH Binh, J Jang, J Lee, BM Kim, B Lim Chemistry–An Asian Journal 8 (5), 919-925, 2013 | 42 | 2013 |
| Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface … QH Luc, HB Do, MTH Ha, CC Hu, YC Lin, EY Chang IEEE Electron Device Letters 36 (12), 1277-1280, 2015 | 35 | 2015 |
| Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect … QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ... IEEE Electron Device Letters 37 (8), 974-977, 2016 | 27 | 2016 |
| First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ... 2018 IEEE Symposium on VLSI Technology, 47-48, 2018 | 22 | 2018 |
| In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ... IEEE Electron Device Letters 39 (3), 339-342, 2018 | 20 | 2018 |
| Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang Applied Physics Letters 109 (10), 2016 | 17 | 2016 |
| Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack HB Do, QH Luc, MTH Ha, CC Hu, YC Lin, EY Chang IEEE Transactions on Electron Devices 62 (12), 3987-3991, 2015 | 13 | 2015 |
| Technological evolution of image sensing designed by nanostructured materials MA Iqbal, M Malik, TK Le, N Anwar, S Bakhsh, W Shahid, S Shahid, ... ACS Materials Letters 5 (4), 1027-1060, 2023 | 10 | 2023 |
| Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, C Hu, YC Lin, ... IEEE Electron Device Letters 38 (5), 552-555, 2017 | 10 | 2017 |
| Methods for extracting flat band voltage in the InGaAs high mobility materials HB Do, QH Luc, MTH Ha, SH Huynh, C Hu, YC Lin, EY Chang IEEE Electron Device Letters 37 (9), 1100-1103, 2016 | 9 | 2016 |
| Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study HB Do, AV Phan-Gia, VQ Nguyen, MM De Souza AIP Advances 12 (6), 2022 | 7 | 2022 |
| Understanding up and down-conversion luminescence for Er3+/Yb3+ co-doped SiO2-SnO2 glass-ceramics CTM Dung, LTT Giang, DH Binh, TTT Van Journal of Alloys and Compounds 870, 159405, 2021 | 7 | 2021 |
| Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor … MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, EY Chang Materials Research Express 4 (8), 085901, 2017 | 7 | 2017 |
| Materials growth and band offset determination of Al2O3/In0. 15Ga0. 85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang Applied Physics Letters 110 (2), 2017 | 7 | 2017 |
| Growth of high-quality In0. 28Ga0. 72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide … SH Huynh, MTH Ha, HB Do, TA Nguyen, HW Yu, QH Luc, EY Chang Applied Physics Express 10 (7), 075505, 2017 | 6 | 2017 |
| Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As HB Do, QH Luc, MTH Ha, SH Huynh, CC Hu, YC Lin, EY Chang IEEE Transactions on Electron Devices 63 (12), 4714-4719, 2016 | 6 | 2016 |
| Intense green upconversion in core-shell structured NaYF4: Er, Yb@ SiO2 microparticles for anti-counterfeiting printing NB Tong, CTM Dung, TTK Hanh, TTN Lam, PB Thang, DH Binh, ... Ceramics International, 2023 | 5 | 2023 |
Luc, Quang-HoNational Chiao Tung University (NCTU)Verified email at nctu.edu.tw
