追蹤
Mao-Lin Huang
Mao-Lin Huang
Taiwan Semiconductor Manufacturing Company
在 oz.nthu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Spectromicroscopic evidence for epitaxial poly-Si thin film formed on amorphous Si substrate by nickel induced lateral crystallization
IH Hong, TC Hsu, SC Yen, FS Lin, ML Huang, CH Chen
Applied physics letters 89 (18), 182116, 2006
5062006
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al 2 O 3
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ...
Applied Physics Letters 87 (25), 252104-252104-3, 2005
4752005
Energy-band parameters of atomic-layer-deposition Al 2 O 3/InGaAs heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89 (1), 012903-012903-3, 2006
2402006
Structural and electrical characteristics of atomic layer deposited high κ HfO 2 on GaN
YC Chang, HC Chiu, YJ Lee, ML Huang, KY Lee, M Hong, YN Chiu, ...
Applied physics letters 90 (23), 232904-232904-3, 2007
1512007
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Layl, ...
Applied Physics Letters 92 (7), 072901-072901-3, 2008
1382008
III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics
M Hong, JR Kwo, P Tsai, Y Chang, ML Huang, C Chen
Japanese journal of applied physics 46 (5S), 3167, 2007
942007
Atomic-layer-deposited Al< sub> 2</sub> O< sub> 3</sub> and HfO< sub> 2</sub> on GaN: A comparative study on interfaces and electrical characteristics
YC Chang, ML Huang, YH Chang, YJ Lee, HC Chiu, J Kwo, M Hong
Microelectronic Engineering 88 (7), 1207-1210, 2011
90*2011
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs
ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong
Applied Physics Letters 94 (5), 052106-052106-3, 2009
872009
Nanometer‐Thick Single‐Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology
WH Chang, CH Lee, YC Chang, P Chang, ML Huang, YJ Lee, CH Hsu, ...
Advanced Materials 21 (48), 4970-4974, 2009
722009
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong
Applied Physics Letters 100 (17), 172110, 2012
652012
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
KY Lee, YJ Lee, P Chang, ML Huang, YC Chang, M Hong, J Kwo
Applied Physics Letters 92 (25), 252908-252908-3, 2008
622008
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo
Applied physics letters 90 (15), 152908, 2007
572007
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y< sub> 2</sub> O< sub> 3</sub> on Ge
LK Chu, WC Lee, ML Huang, YH Chang, LT Tung, CC Chang, YJ Lee, ...
Journal of Crystal Growth 311 (7), 2195-2198, 2009
472009
InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
M Hong, J Kwo, TD Lin, ML Huang
MRS bulletin 34 (07), 514-521, 2009
402009
Lithography with a focused soft X-ray beam and a monomolecular resist
R Klauser, ML Huang, SC Wang, CH Chen, TJ Chuang, A Terfort, ...
Langmuir 20 (6), 2050-2053, 2004
382004
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
P Chang, HC Chiu, TD Lin, ML Huang, WH Chang, SY Wu, KH Wu, ...
Applied Physics Express 4 (11), 114202, 2011
372011
Ga 2 O 3 (Gd 2 O 3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong
Applied Physics Letters 94 (20), 202108-202108-3, 2009
352009
In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, CH Fan, HT Lin, CH Lin, RL Chu, ...
2015 Symposia on VLSI Technology and Circuits 2015 (Digest of Technical …, 2015
342015
High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, Y Oniki, HC Chen, CH Lin, WC Lee, ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
332016
High performance In0.53Ga0.47As FinFETs Fabricated on 300 mm Si Substrate
2016 Symposia on VLSI Technology and Circuits 2016 (Digest of Technical …, 2016
33*2016
系統目前無法執行作業,請稍後再試。
文章 1–20