Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping S Wi, H Kim, M Chen, H Nam, LJ Guo, E Meyhofer, X Liang ACS nano 8 (5), 5270-5281, 2014 | 470 | 2014 |
Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping M Chen, H Nam, S Wi, L Ji, X Ren, L Bian, S Lu, X Liang Applied Physics Letters 103 (14), 2013 | 263 | 2013 |
Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors M Chen, H Nam, S Wi, G Priessnitz, IM Gunawan, X Liang Acs Nano 8 (4), 4023-4032, 2014 | 181 | 2014 |
MoS2 Transistors Fabricated via Plasma-Assisted Nanoprinting of Few-Layer MoS2 Flakes into Large-Area Arrays H Nam, S Wi, H Rokni, M Chen, G Priessnitz, W Lu, X Liang ACS nano 7 (7), 5870-5881, 2013 | 146 | 2013 |
Transport characteristics of multichannel transistors made from densely aligned sub-10 nm half-pitch graphene nanoribbons X Liang, S Wi ACS nano 6 (11), 9700-9710, 2012 | 95 | 2012 |
Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics H Nam, BR Oh, P Chen, M Chen, S Wi, W Wan, K Kurabayashi, X Liang Scientific reports 5 (1), 10546, 2015 | 91 | 2015 |
Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors H Nam, BR Oh, M Chen, S Wi, D Li, K Kurabayashi, X Liang Journal of Vacuum Science & Technology B 33 (6), 2015 | 69 | 2015 |
Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits H Nam, BR Oh, P Chen, JS Yoon, S Wi, M Chen, K Kurabayashi, X Liang Applied Physics Letters 107 (1), 2015 | 62 | 2015 |
Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays M Chen, H Nam, H Rokni, S Wi, JS Yoon, P Chen, K Kurabayashi, W Lu, ... ACS nano 9 (9), 8773-8785, 2015 | 61 | 2015 |
High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS2-metal heterostructures S Wi, M Chen, H Nam, AC Liu, E Meyhofer, X Liang Applied Physics Letters 104 (23), 2014 | 45 | 2014 |
Photovoltaic response in pristine WSe2 layers modulated by metal-induced surface-charge-transfer doping S Wi, M Chen, D Li, H Nam, E Meyhofer, X Liang Applied Physics Letters 107 (6), 2015 | 40 | 2015 |
Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors M Chen, S Wi, H Nam, G Priessnitz, X Liang Journal of Vacuum Science & Technology B 32 (6), 2014 | 40 | 2014 |
Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures D Li, S Wi, M Chen, B Ryu, X Liang Journal of Vacuum Science & Technology B 34 (6), 2016 | 16 | 2016 |
Plasma-assisted techniques for fabricating semiconductor devices X Liang, H Nam, S Wi, M Chen US Patent 9,373,742, 2016 | 15 | 2016 |
Nanoimprinted substrates for high-yield production of topological insulator nanoribbons S Wi, E Elezi, AC Liu, V Ray, K Sun, X Liang Applied Physics A 111, 755-766, 2013 | 5 | 2013 |
Plasma-assisted printing and doping processes for manufacturing few-layer MoS2-based electronic and optoelectronic devices X Liang, H Nam, S Wi, M Chen 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014 | 3 | 2014 |
Correction to Transport Characteristics of Multichannel Transistors Made from Densely Aligned Sub-10 nm Half-Pitch Graphene Nanoribbons X Liang, S Wi ACS Nano 7 (9), 8310-8310, 2013 | 1 | 2013 |
Field effect transistor memory device X Liang, H Nam, S Wi, M Chen US Patent 9,960,175, 2018 | | 2018 |
Advanced Nanofabrication Technologies for Making Photo-Response Devices Based on Emerging Layered Transition Metal Dichalcogenides. S Wi | | 2016 |