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Udayan Ganguly
Udayan Ganguly
Professor, Electrical Engineering, IIT Bombay
在 ee.iitb.ac.in 的電子郵件地址已通過驗證 - 首頁
標題
引用次數
引用次數
年份
Apparatus and methods for cyclical oxidation and etching
U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ...
6642011
Apparatus and Methods for Cyclical Oxidation and Etching
U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ...
US Patent App. 12/720,942, 2011
2072011
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
U Ganguly, Y Yokota, J Tang, S Thirupapuliyur, CS Olsen, S Sun, ...
US Patent 8,871,645, 2014
1982014
Apparatus and Methods for Cyclical Oxidation and Etching
U Ganguly, Y Yokota, CS Olsen, MD Scotney-Castle, V Nguyen, ...
US Patent App. 12/720,926, 2011
1882011
Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET
S Dutta, V Kumar, A Shukla, NR Mohapatra, U Ganguly
Scientific reports 7 (1), 8257, 2017
1792017
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ...
Applied Physics Letters 101 (18), 2012
1342012
PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly
IEEE Electron Device Letters 39 (4), 484-487, 2018
1222018
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
1092012
Design optimization of metal nanocrystal memory—Part I: Nanocrystal array engineering
TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan
IEEE transactions on electron devices 53 (12), 3095-3102, 2006
932006
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
N Panwar, B Rajendran, U Ganguly
IEEE Electron Device Letters 38 (6), 740-743, 2017
682017
Nanotube-and nanocrystal-based non-volatile memory
Y Zhang, U Ganguly, E Kan
US Patent 7,262,991, 2007
682007
Asymmetric electric field enhancement in nanocrystal memories
C Lee, U Ganguly, V Narayanan, TH Hou, J Kim, EC Kan
IEEE electron device letters 26 (12), 879-881, 2005
562005
Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals
U Ganguly, EC Kan, Y Zhang
Applied Physics Letters 87 (4), 2005
542005
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly
IEEE Electron Device Letters 38 (9), 1212-1215, 2017
492017
Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme
S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ...
Journal of Applied Physics 113 (3), 2013
472013
Threshold voltage variability in nanosheet GAA transistors
PH Vardhan, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019
432019
Modification of charge trap silicon nitride with oxygen plasma
CS Olsen, TW Poon, U Ganguly, J Swenberg
US Patent 8,198,671, 2012
392012
Design optimization of metal nanocrystal memory—Part II: Gate-stack engineering
TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan
IEEE transactions on electron devices 53 (12), 3103-3109, 2006
382006
Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler–Nordheim tunneling program/erase operation
C Sandhya, U Ganguly, N Chattar, C Olsen, SM Seutter, L Date, R Hung, ...
IEEE electron device letters 30 (2), 171-173, 2008
362008
Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation
C Sandhya, AB Oak, N Chattar, AS Joshi, U Ganguly, C Olsen, SM Seutter, ...
IEEE transactions on electron devices 56 (12), 3123-3132, 2009
342009
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