| Determination of bulk states and interface states distributions in polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis, NA Economou, AJ Lowe Journal of applied physics 74 (4), 2919-2924, 1993 | 76 | 1993 |
| Compact model of drain current in short-channel triple-gate FinFETs N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ... IEEE transactions on electron devices 59 (7), 1891-1898, 2012 | 70 | 2012 |
| A compact drain current model of short-channel cylindrical gate-all-around MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... Semiconductor science and technology 24 (7), 075017, 2009 | 67 | 2009 |
| On the threshold voltage and channel conductance of polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis Journal of applied physics 79 (8), 4431-4437, 1996 | 63 | 1996 |
| Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... Microelectronic Engineering 87 (9), 1764-1768, 2010 | 56 | 2010 |
| Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, F Templier, ... Journal of Applied Physics 108 (10), 2010 | 49 | 2010 |
| Characteristics of Schottky diodes deposited by reactive magnetron sputtering CA Dimitriadis, JI Lee, P Patsalas, S Logothetidis, DH Tassis, J Brini, ... Journal of applied physics 85 (8), 4238-4242, 1999 | 49 | 1999 |
| Analytical unified threshold voltage model of short-channel FinFETs and implementation N Fasarakis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, ... Solid-state electronics 64 (1), 34-41, 2011 | 48 | 2011 |
| Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... IEEE transactions on Electron Devices 58 (2), 433-440, 2010 | 48 | 2010 |
| Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films DH Tassis, CL Mitsas, TT Zorba, CA Dimitriadis, O Valassiades, ... Journal of applied physics 80 (2), 962-968, 1996 | 47 | 1996 |
| Compact modeling of nanoscale trapezoidal FinFETs N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ... IEEE Transactions on Electron Devices 61 (2), 324-332, 2013 | 43 | 2013 |
| Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control N Fasarakis, T Karatsori, DH Tassis, CG Theodorou, F Andrieu, O Faynot, ... IEEE Transactions on Electron Devices 61 (4), 969-975, 2014 | 42 | 2014 |
| Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ... IEEE Transactions on Electron Devices 64 (1), 66-72, 2016 | 37 | 2016 |
| On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos IEEE transactions on electron devices 52 (8), 1727-1733, 2005 | 35 | 2005 |
| The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting films DH Tassis, CA Dimitriadis, O Valassiades Journal of applied physics 84 (5), 2960-2962, 1998 | 33 | 1998 |
| Output characteristics of short‐channel polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis Journal of applied physics 77 (5), 2177-2183, 1995 | 31 | 1995 |
| Symmetrical unified compact model of short-channel double-gate MOSFETs K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ... Solid-state electronics 69, 55-61, 2012 | 29 | 2012 |
| An analytical hot-carrier induced degradation model in polysilicon TFTs AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos IEEE transactions on electron devices 52 (10), 2182-2187, 2005 | 29 | 2005 |
| Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, N Collaert, ... Solid-state electronics 57 (1), 31-34, 2011 | 26 | 2011 |
| Deep levels in silicon Schottky junctions with embedded arrays of β‐FeSi2 nanocrystallites A Tsormpatzoglou, DH Tassis, CA Dimitriadis, L Dózsa, NG Galkin, ... Journal of applied physics 100 (7), 2006 | 26 | 2006 |
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, Greece在 physics.auth.gr 的電子郵件地址已通過驗證
