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Firman Mangasa Simanjuntak
Firman Mangasa Simanjuntak
Lecturer, Marie-Curie Fellow - University of Southampton
Verified email at soton.ac.uk - Homepage
Title
Cited by
Cited by
Year
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
FM Simanjuntak, D Panda, W Kung-Hwa, T Tseung-Yuen
Nanoscale Research Letters 11 (1), 368, 2016
2252016
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng
Nanotechnology 30 (44), 445205, 2019
1012019
Impacts of Co doping on ZnO transparent switching memory device characteristics
FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ...
Applied Physics Letters 108 (18), 183506, 2016
842016
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Journal of materials science 50, 6961-6969, 2015
662015
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng
IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019
582019
Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Applied Physics Letters 107 (3), 2015
562015
Low-power electronic technologies for harsh radiation environments
J Prinzie, FM Simanjuntak*, P Leroux, T Prodromakis
Nature Electronics, 1-11, 2021
452021
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
APL Materials 7 (5), 2019
452019
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
A Saleem, FM Simanjuntak, S Chandrasekaran, S Rajasekaran, ...
Applied Physics Letters 118 (11), 2021
382021
Temperature induced complementary switching in titanium oxide resistive random access memory
TYT Debashis Panda, Firman Mangasa Simanjuntak
AIP Advances 6 (7), 075314, 2016
382016
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
F Simanjuntak, T Ohno, S Chandrasekaran, TY Tseng, S Samukawa
Nanotechnology, 2020
362020
Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency
FM Simanjuntak*, T Ohno, S Samukawa
ACS Applied Electronic Materials 1 (11), 2184-2189, 2019
342019
Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications
S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ...
ACS Applied Electronic Materials 2 (10), 3131-3140, 2020
332020
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
P Singh, FM Simanjuntak, A Kumar, TY Tseng
Thin Solid Films 660, 828-833, 2018
332018
Neutral oxygen beam treated ZnO-based resistive switching memory device
FM Simanjuntak*, T Ohno, S Samukawa
ACS Applied Electronic Materials 1 (1), 18-24, 2018
322018
Synthesis of Fe3O4/Ag nanohybrid ferrofluids and their applications as antimicrobial and antifibrotic agents
A Taufiq, RE Saputro, H Susanto, N Hidayat, S Sunaryono, T Amrillah, ...
Heliyon 6 (12), 2020
312020
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ...
Semiconductor Science and Technology 32 (12), 124003, 2017
312017
One bipolar transistor selector-One resistive random access memory device for cross bar memory array
R Aluguri, D Kumar, FM Simanjuntak, TY Tseng
AIP Advances 7 (9), 2017
312017
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng
Nanotechnology 28 (38), 38LT02, 2017
312017
Switching failure mechanism in zinc peroxide-based programmable metallization cell
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
Nanoscale research letters 13, 1-8, 2018
292018
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