| Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016 | 753 | 2016 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 421 | 2016 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 235 | 2014 |
| Remote Plasma Oxidation and Atomic Layer Etching of MoS2 H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016 | 190 | 2016 |
| Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone L Cheng, X Qin, AT Lucero, A Azcatl, J Huang, RM Wallace, K Cho, J Kim ACS applied materials & interfaces 6 (15), 11834-11838, 2014 | 145 | 2014 |
| HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study A Azcatl, KC Santosh, X Peng, N Lu, S McDonnell, X Qin, F De Dios, ... 2D Materials 2 (1), 014004, 2015 | 133 | 2015 |
| Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide C Gong, HC Floresca, D Hinojos, S McDonnell, X Qin, Y Hao, ... The Journal of Physical Chemistry C 117 (44), 23000-23008, 2013 | 133 | 2013 |
| Realistic metal–graphene contact structures C Gong, S McDonnell, X Qin, A Azcatl, H Dong, YJ Chabal, K Cho, ... ACS nano 8 (1), 642-649, 2014 | 121 | 2014 |
| Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study H Zhu, S McDonnell, X Qin, A Azcatl, L Cheng, R Addou, J Kim, PD Ye, ... ACS applied materials & interfaces 7 (23), 13038-13043, 2015 | 100 | 2015 |
| A crystalline oxide passivation for Al2O3/AlGaN/GaN X Qin, H Dong, J Kim, RM Wallace Applied Physics Letters 105 (14), 2014 | 73 | 2014 |
| Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ... Applied Physics Letters 103, 061601, 2013 | 48 | 2013 |
| In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN B Brennan, X Qin, H Dong, J Kim, RM Wallace Applied Physics Letters 101 (21), 2012 | 47 | 2012 |
| Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy H Dong, C Gong, R Addou, S McDonnell, A Azcatl, X Qin, W Wang, ... ACS applied materials & interfaces 9 (44), 38977-38983, 2017 | 43 | 2017 |
| Effect of BaF2 Addition on Crystallization Kinetics and Dielectric Properties of B2O3–Nb2O5–SrO–BaO Glass–Ceramics Y Zeng, X Qin, S Jiang, G Zhang, L Zhang Journal of the American Ceramic Society 94 (2), 469-473, 2011 | 37 | 2011 |
| Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN X Qin, H Dong, B Brennan, A Azacatl, J Kim, RM Wallace Applied Physics Letters 103 (22), 2013 | 34 | 2013 |
| A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN X Qin, L Cheng, S McDonnell, A Azcatl, H Zhu, J Kim, RM Wallace Journal of Materials Science: Materials in Electronics 26 (7), 4638-4643, 2015 | 32 | 2015 |
| In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks X Qin, A Lucero, A Azcatl, J Kim, RM Wallace Applied Physics Letters 105 (1), 2014 | 30 | 2014 |
| In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors X Qin, RM Wallace Applied Physics Letters 107 (8), 2015 | 24 | 2015 |
| In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N X Qin, B Brennan, H Dong, J Kim, CL Hinkle, RM Wallace Journal of Applied Physics 113, 244102, 2013 | 20 | 2013 |
| Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus H Zhu, X Qin, A Azcatl, R Addou, S McDonnell, DY Peide, RM Wallace Microelectronic Engineering 147, 1-4, 2015 | 18 | 2015 |
Lanxia ChengStaff Engineer_EMD Electronics在 emdgroup.com 的電子郵件地址已通過驗證
