追蹤
Lee Sang Kyung
Lee Sang Kyung
Alpha Graphene Inc.
在 gist.ac.kr 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Effects of multi-layer graphene capping on Cu interconnects
CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ...
Nanotechnology 24 (11), 115707, 2013
972013
Gate‐Controlled graphene–silicon Schottky junction photodetector
KE Chang, TJ Yoo, C Kim, YJ Kim, SK Lee, SY Kim, S Heo, MG Kwon, ...
Small 14 (28), 1801182, 2018
632018
Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors
CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee
Carbon 53, 182-187, 2013
622013
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack
W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
522013
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
462011
Graphene transfer in vacuum yielding a high quality graphene
S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee
Carbon 93, 286-294, 2015
432015
Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al2O3
CG Kang, SK Lee, S Choe, YG Lee, CL Lee, BH Lee
Optics express 21 (20), 23391-23400, 2013
382013
Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs
W Park, Y Kim, SK Lee, U Jung, JH Yang, C Cho, YJ Kim, SK Lim, ...
2014 IEEE International Electron Devices Meeting, 5.1. 1-5.1. 4, 2014
342014
Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts
TJ Yoo, YJ Kim, SK Lee, CG Kang, KE Chang, HJ Hwang, N Revannath, ...
Acs Photonics 5 (2), 365-370, 2018
332018
A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
YJ Kim, YG Lee, U Jung, S Lee, SK Lee, BH Lee
Nanoscale 7 (9), 4013-4019, 2015
322015
Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment
CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ...
IEEE electron device letters 32 (11), 1591-1593, 2011
282011
A graphene barristor using nitrogen profile controlled ZnO Schottky contacts
HJ Hwang, KE Chang, WB Yoo, CH Shim, SK Lee, JH Yang, SY Kim, ...
Nanoscale 9 (7), 2442-2448, 2017
252017
Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene
C Goo Kang, S Kyung Lee, T Jin Yoo, W Park, U Jung, J Ahn, B Hun Lee
Applied Physics Letters 104 (16), 2014
252014
Intrinsic time zero dielectric breakdown characteristics of HfAlO alloys
JJ Kim, M Kim, U Jung, KE Chang, S Lee, Y Kim, YG Lee, R Choi, BH Lee
IEEE transactions on electron devices 60 (11), 3683-3689, 2013
202013
Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices
SK Lee, CG Kang, YG Lee, C Cho, E Park, HJ Chung, S Seo, HD Lee, ...
Carbon 50 (11), 4046-4051, 2012
202012
Advantages of a buried-gate structure for graphene field-effect transistor
SK Lee, YJ Kim, S Heo, W Park, TJ Yoo, C Cho, HJ Hwang, BH Lee
Semiconductor Science and Technology 34 (5), 055010, 2019
192019
Reduction of low‐frequency noise in multilayer MoS2 FETs using a Fermi‐level depinning layer
Y Kim, W Park, JH Yang, C Cho, SK Lee, BH Lee
physica status solidi (RRL)–Rapid Research Letters 10 (8), 634-638, 2016
162016
Operation Mechanism of a MoS2/BP Heterojunction FET
SK Lim, SC Kang, TJ Yoo, SK Lee, HJ Hwang, BH Lee
Nanomaterials 8 (10), 797, 2018
132018
Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern
C Cho, SK Lee, JW Noh, W Park, S Lee, YG Lee, HJ Hwang, CG Kang, ...
Applied Physics Letters 106 (21), 2015
132015
Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode
W Park, SF Shaikh, JW Min, SK Lee, BH Lee, MM Hussain
Nanotechnology 29 (32), 325202, 2018
102018
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